The ferroelectric field-effect transistor with negative capacitance. Luk’yanchuk, I., Razumnaya, A., Sené, A., Tikhonov, Y., & Vinokur, V. M. npj Computational Materials, 8(1):52, March, 2022. ![The ferroelectric field-effect transistor with negative capacitance [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.
@article{lukyanchuk_ferroelectric_2022,
title = {The ferroelectric field-effect transistor with negative capacitance},
volume = {8},
issn = {2057-3960},
url = {https://www.nature.com/articles/s41524-022-00738-2},
doi = {10.1038/s41524-022-00738-2},
abstract = {Abstract
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.},
language = {en},
number = {1},
urldate = {2023-11-11},
journal = {npj Computational Materials},
author = {Luk’yanchuk, I. and Razumnaya, A. and Sené, A. and Tikhonov, Y. and Vinokur, V. M.},
month = mar,
year = {2022},
pages = {52},
file = {Полный текст:C\:\\Users\\aleks\\Zotero\\storage\\RNZJZAMQ\\Luk’yanchuk и др. - 2022 - The ferroelectric field-effect transistor with neg.pdf:application/pdf;Полный текст:C\:\\Users\\aleks\\Zotero\\storage\\NWIGDCZ5\\Luk’yanchuk и др. - 2022 - The ferroelectric field-effect transistor with neg.pdf:application/pdf},
}
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{"_id":"RZJ8FKqsQu46iXDXF","bibbaseid":"lukyanchuk-razumnaya-sen-tikhonov-vinokur-theferroelectricfieldeffecttransistorwithnegativecapacitance-2022","author_short":["Luk’yanchuk, I.","Razumnaya, A.","Sené, A.","Tikhonov, Y.","Vinokur, V. M."],"bibdata":{"bibtype":"article","type":"article","title":"The ferroelectric field-effect transistor with negative capacitance","volume":"8","issn":"2057-3960","url":"https://www.nature.com/articles/s41524-022-00738-2","doi":"10.1038/s41524-022-00738-2","abstract":"Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.","language":"en","number":"1","urldate":"2023-11-11","journal":"npj Computational Materials","author":[{"propositions":[],"lastnames":["Luk’yanchuk"],"firstnames":["I."],"suffixes":[]},{"propositions":[],"lastnames":["Razumnaya"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Sené"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Tikhonov"],"firstnames":["Y."],"suffixes":[]},{"propositions":[],"lastnames":["Vinokur"],"firstnames":["V.","M."],"suffixes":[]}],"month":"March","year":"2022","pages":"52","file":"Полный текст:C\\:\\\\Users\\\\aleks\\\\Zotero\\\\storage\\\\RNZJZAMQ\\Łuk’yanchuk и др. - 2022 - The ferroelectric field-effect transistor with neg.pdf:application/pdf;Полный текст:C\\:\\\\Users\\\\aleks\\\\Zotero\\\\storage\\\\NWIGDCZ5\\Łuk’yanchuk и др. - 2022 - The ferroelectric field-effect transistor with neg.pdf:application/pdf","bibtex":"@article{lukyanchuk_ferroelectric_2022,\n\ttitle = {The ferroelectric field-effect transistor with negative capacitance},\n\tvolume = {8},\n\tissn = {2057-3960},\n\turl = {https://www.nature.com/articles/s41524-022-00738-2},\n\tdoi = {10.1038/s41524-022-00738-2},\n\tabstract = {Abstract\n Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.},\n\tlanguage = {en},\n\tnumber = {1},\n\turldate = {2023-11-11},\n\tjournal = {npj Computational Materials},\n\tauthor = {Luk’yanchuk, I. and Razumnaya, A. and Sené, A. and Tikhonov, Y. and Vinokur, V. M.},\n\tmonth = mar,\n\tyear = {2022},\n\tpages = {52},\n\tfile = {Полный текст:C\\:\\\\Users\\\\aleks\\\\Zotero\\\\storage\\\\RNZJZAMQ\\\\Luk’yanchuk и др. - 2022 - The ferroelectric field-effect transistor with neg.pdf:application/pdf;Полный текст:C\\:\\\\Users\\\\aleks\\\\Zotero\\\\storage\\\\NWIGDCZ5\\\\Luk’yanchuk и др. - 2022 - The ferroelectric field-effect transistor with neg.pdf:application/pdf},\n}\n\n","author_short":["Luk’yanchuk, I.","Razumnaya, A.","Sené, A.","Tikhonov, Y.","Vinokur, V. M."],"key":"lukyanchuk_ferroelectric_2022","id":"lukyanchuk_ferroelectric_2022","bibbaseid":"lukyanchuk-razumnaya-sen-tikhonov-vinokur-theferroelectricfieldeffecttransistorwithnegativecapacitance-2022","role":"author","urls":{"Paper":"https://www.nature.com/articles/s41524-022-00738-2"},"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/f/NkS9m4R3ieFPicBbH/nanokafedra2002-2023.bib","dataSources":["yfALjDxpytYXNivLG","aXdkuPsRx8RrZSyGs","WREjHp386qXAuXffu","3559CMqZA6vHgHHmb","3xT8SMGPLHLRwLW4t","H8jzwZT5FQ8p3uspr","t334MWsk8W74r2QJi","XXMPhKJLn3LzRFzbL","5vfT7chqyKSuztznA","EotKB7sk8uWbfvCNP","3bDLdJJSLMCzwHmsG","prFTW7rEBBSfixaBo"],"keywords":[],"search_terms":["ferroelectric","field","effect","transistor","negative","capacitance","luk’yanchuk","razumnaya","sené","tikhonov","vinokur"],"title":"The ferroelectric field-effect transistor with negative capacitance","year":2022}