Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells. Luo, Q., Xu, X., Liu, H., Lv, H., Gong, T., Long, S., Liu, Q., Sun, H., Banerjee, W., Li, L., Gao, J., Lu, N., Chung, S. S., Li, J., & Liu, M. In 2015 IEEE International Electron Devices Meeting (<strong>IEDM</strong>), pages 10.2.1–10.2.4, Dec, 2015.
doi bibtex

@INPROCEEDINGS{luo2015iedm, 
author={Q. Luo and X. Xu and H. Liu and H. Lv and T. Gong and S. Long and Q. Liu and H. Sun and W. Banerjee and L. Li and J. Gao and N. Lu and S. S. Chung and Jing Li and M. Liu}, 
booktitle={2015 IEEE International Electron Devices Meeting (<strong>IEDM</strong>)}, 
title={Demonstration of 3D vertical {RRAM} with ultra low-leakage, high-selectivity and self-compliance memory cells}, 
year={2015}, 
date={2015-12},
volume={}, 
number={}, 
pages={10.2.1--10.2.4}, 
keywords={conference, hafnium compounds,ionic conductivity,leakage currents,mixed conductivity,resistive RAM,3D vertical RRAM,HfO2,HfO2/mixed ionic and electronic conductor bilayer,four-layer V-RRAM array,high selectivity,nonlinearity,operation current,self-compliance memory cells,self-selective cell,ultra low-leakage,ultra-low half-select leakage,Hafnium compounds,Leakage currents,Optical switches,Resistance,Three-dimensional displays,Tin}, 
doi={10.1109/IEDM.2015.7409667}, 
ISSN={}, 
month={Dec},
%note={(Acceptance Rate*: <u>33\%</u>)},
}

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