Two-dimensional electron-gas density in AlXGa1-XN/GaN heterostructure field-effect transistors. Maeda, N., Nishida, T., Kobayashi, N., & Tomizawa, M. Applied Physics Letters, 73(13):1856–1858, 1998. doi abstract bibtex We have calculated maximum two-dimensional electron-gas densities in AlXGa1-XN/GaN heterostructure field-effect transistors with wurtzite crystal structures in (0001) orientation, by self-consistently solving Schrödinger's and Poisson's equations, taking the piezoelectric effect into account. In order to obtain a guideline for increasing electron densities in the devices, we have examined dependences of the maximum electron densities on both Al compositions of AlXGa1-XN layers and lattice relaxations at the heterointerfaces. The maximum electron density was found to depend more strongly on the lattice relaxation than on the Al composition, which determines the conduction-band discontinuity. Controlling the lattice relaxation is shown to be crucial for obtaining high electron densities in the devices. © 1998 American Institute of Physics.
@article{maeda_two-dimensional_1998,
title = {Two-dimensional electron-gas density in {AlXGa1}-{XN}/{GaN} heterostructure field-effect transistors},
volume = {73},
issn = {00036951},
doi = {10.1063/1.122305},
abstract = {We have calculated maximum two-dimensional electron-gas densities in AlXGa1-XN/GaN heterostructure field-effect transistors with wurtzite crystal structures in (0001) orientation, by self-consistently solving Schrödinger's and Poisson's equations, taking the piezoelectric effect into account. In order to obtain a guideline for increasing electron densities in the devices, we have examined dependences of the maximum electron densities on both Al compositions of AlXGa1-XN layers and lattice relaxations at the heterointerfaces. The maximum electron density was found to depend more strongly on the lattice relaxation than on the Al composition, which determines the conduction-band discontinuity. Controlling the lattice relaxation is shown to be crucial for obtaining high electron densities in the devices. © 1998 American Institute of Physics.},
number = {13},
journal = {Applied Physics Letters},
author = {Maeda, Narihiko and Nishida, Toshio and Kobayashi, Naoki and Tomizawa, Masaaki},
year = {1998},
pages = {1856--1858},
}
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