Thermal microscopy and heat generation in electronic devices1. Majumdar, A Microelectronics Reliability, 38:559-565, April 1998, 1998.
Paper abstract bibtex This paper reports our progress on the development of thermal microscopy for studying heat generation in electronic devices and interconnects. The resolution of the scanning thermal microscope has been improved from about 500 nm achieved by the first wire thermocouple probes to about 25 nm for the more recent thin-film thermocouple probes. These have been used to measure the temperature distribution and hot spots of single transistors, short circuits in transistors created by electrostatic discharge failures, as well as novel devices such as vertical-cavity surface emitting lasers and magnetoresistive reading heads. Recently, a new technique called scanning Joule expansion microscopy has been developed to measure the temperature distribution of electrically heated samples with about 10 nm spatial resolution. The advantage of this technique is that it does not require fabrication of temperature-sensing probes and can use commercially-available cantilever probes that are employed in atomic force microscopes.
@article {829,
title = {Thermal microscopy and heat generation in electronic devices1},
journal = {Microelectronics Reliability},
volume = {38},
year = {1998},
month = {April 1998},
pages = {559-565},
abstract = {This paper reports our progress on the development of thermal microscopy for studying heat generation in electronic devices and interconnects. The resolution of the scanning thermal microscope has been improved from about 500 nm achieved by the first wire thermocouple probes to about 25 nm for the more recent thin-film thermocouple probes. These have been used to measure the temperature distribution and hot spots of single transistors, short circuits in transistors created by electrostatic discharge failures, as well as novel devices such as vertical-cavity surface emitting lasers and magnetoresistive reading heads. Recently, a new technique called scanning Joule expansion microscopy has been developed to measure the temperature distribution of electrically heated samples with about 10 nm spatial resolution. The advantage of this technique is that it does not require fabrication of temperature-sensing probes and can use commercially-available cantilever probes that are employed in atomic force microscopes.},
isbn = {0026-2714},
url = {http://www.sciencedirect.com/science/article/pii/S0026271497002072},
author = {Majumdar, A}
}
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The resolution of the scanning thermal microscope has been improved from about 500 nm achieved by the first wire thermocouple probes to about 25 nm for the more recent thin-film thermocouple probes. These have been used to measure the temperature distribution and hot spots of single transistors, short circuits in transistors created by electrostatic discharge failures, as well as novel devices such as vertical-cavity surface emitting lasers and magnetoresistive reading heads. Recently, a new technique called scanning Joule expansion microscopy has been developed to measure the temperature distribution of electrically heated samples with about 10 nm spatial resolution. The advantage of this technique is that it does not require fabrication of temperature-sensing probes and can use commercially-available cantilever probes that are employed in atomic force microscopes.","isbn":"0026-2714","url":"http://www.sciencedirect.com/science/article/pii/S0026271497002072","author":[{"propositions":[],"lastnames":["Majumdar"],"firstnames":["A"],"suffixes":[]}],"bibtex":"@article {829,\n\ttitle = {Thermal microscopy and heat generation in electronic devices1},\n\tjournal = {Microelectronics Reliability},\n\tvolume = {38},\n\tyear = {1998},\n\tmonth = {April 1998},\n\tpages = {559-565},\n\tabstract = {This paper reports our progress on the development of thermal microscopy for studying heat generation in electronic devices and interconnects. The resolution of the scanning thermal microscope has been improved from about 500 nm achieved by the first wire thermocouple probes to about 25 nm for the more recent thin-film thermocouple probes. 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