Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing. Makhloufi, H., Boonpeng, P., Mazzucato, S., Nicolai, J., Arnoult, A., Hungria, T., Lacoste, G., Gatel, C., Ponchet, A., & Carrère, H. Nanoscale research letters, 9(1):123, 2014. bibtex @article{makhloufi_molecular_2014,
title = {Molecular beam epitaxy and properties of {GaAsBi}/{GaAs} quantum wells grown by molecular beam epitaxy: effect of thermal annealing},
volume = {9},
number = {1},
journal = {Nanoscale research letters},
author = {Makhloufi, Hajer and Boonpeng, Poonyasiri and Mazzucato, Simone and Nicolai, Julien and Arnoult, Alexandre and Hungria, Teresa and Lacoste, Guy and Gatel, Christophe and Ponchet, Anne and Carrère, Hélène},
year = {2014},
pages = {123},
}
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