Temperature and Thermal Annealing Effects on Amorphous Silicon PV. Makrides, G., Zinsser, B., Phinikarides, A., Schubert, M., & Georghiou, G. E In 26th EU-PVSEC, pages 3600–3603, Hamburg, Germany, 2011. doi abstract bibtex The effect of temperature on a single-junction a-Si, grid-connected, photovoltaic (PV) system installed in Cyprus was analysed in this study. Initially, the energy yield losses due to temperature were investigated based on acquired measurements of module temperature and using the manufacturer's maximum power point (MPP) temperature coefficients, $\ gamma$PMPP. The same thermal loss investigation was also carried out, using the experimentally evaluated $\ gamma$PMPP coefficients for comparison. In the case of the manufacturer's $\ gamma$PMPP, the results showed that the thermal losses in the annual dc energy yield were 3 - 4 \%\. Similar thermal losses were found when using the experimentally evaluated $\ gamma$PMPP. In addition, temperature effects on the seasonal performance were evident on the monthly average performance ratio (PR) values. An increase in performance from spring until early autumn was observed and was attributed to thermal annealing. The effect of thermal annealing on the performance was revealed by filtering dc MPP power measurements at high irradiance (greater than 800 W/m2) and restricting the values at geometric air mass (AM) in the range 1 $≤$ geometric AM $≤$ 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer's $\ gamma$PMPP for a period of two years. The effect of thermal annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 $≤$ geometric AM $≤$ 1.6 in order to minimize the spectral effects on the performance of the a-Si system. The results showed that thermal annealing caused a 7.5 \%\ increase in power from March to September 2008 and a 7 \%\ increase for the same period in 2009.
@inproceedings{makridesTemperatureThermalAnnealing2011,
title = {Temperature and Thermal Annealing Effects on Amorphous Silicon {{PV}}},
booktitle = {26th {{EU-PVSEC}}},
author = {Makrides, George and Zinsser, Bastian and Phinikarides, Alexander and Schubert, Markus and Georghiou, George E},
year = {2011},
pages = {3600--3603},
address = {{Hamburg, Germany}},
doi = {10.4229/26thEUPVSEC2011-4AV.2.38},
abstract = {The effect of temperature on a single-junction a-Si, grid-connected, photovoltaic (PV) system installed in Cyprus was analysed in this study. Initially, the energy yield losses due to temperature were investigated based on acquired measurements of module temperature and using the manufacturer's maximum power point (MPP) temperature coefficients, \$\textbackslash gamma\$PMPP. The same thermal loss investigation was also carried out, using the experimentally evaluated \$\textbackslash gamma\$PMPP coefficients for comparison. In the case of the manufacturer's \$\textbackslash gamma\$PMPP, the results showed that the thermal losses in the annual dc energy yield were 3 - 4 \{\%\}. Similar thermal losses were found when using the experimentally evaluated \$\textbackslash gamma\$PMPP. In addition, temperature effects on the seasonal performance were evident on the monthly average performance ratio (PR) values. An increase in performance from spring until early autumn was observed and was attributed to thermal annealing. The effect of thermal annealing on the performance was revealed by filtering dc MPP power measurements at high irradiance (greater than 800 W/m2) and restricting the values at geometric air mass (AM) in the range 1 {$\leq$} geometric AM {$\leq$} 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer's \$\textbackslash gamma\$PMPP for a period of two years. The effect of thermal annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 {$\leq$} geometric AM {$\leq$} 1.6 in order to minimize the spectral effects on the performance of the a-Si system. The results showed that thermal annealing caused a 7.5 \{\%\} increase in power from March to September 2008 and a 7 \{\%\} increase for the same period in 2009.},
copyright = {All rights reserved},
keywords = {amorphous silicon,Grid-connected,Thermal annealing,thermal losses},
file = {/home/alexis/Zotero/storage/6XX48Z6R/Makrides et al. - 2011 - Temperature and thermal annealing effects on amorp.pdf}
}
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E"],"bibdata":{"bibtype":"inproceedings","type":"inproceedings","title":"Temperature and Thermal Annealing Effects on Amorphous Silicon PV","booktitle":"26th EU-PVSEC","author":[{"propositions":[],"lastnames":["Makrides"],"firstnames":["George"],"suffixes":[]},{"propositions":[],"lastnames":["Zinsser"],"firstnames":["Bastian"],"suffixes":[]},{"propositions":[],"lastnames":["Phinikarides"],"firstnames":["Alexander"],"suffixes":[]},{"propositions":[],"lastnames":["Schubert"],"firstnames":["Markus"],"suffixes":[]},{"propositions":[],"lastnames":["Georghiou"],"firstnames":["George","E"],"suffixes":[]}],"year":"2011","pages":"3600–3603","address":"Hamburg, Germany","doi":"10.4229/26thEUPVSEC2011-4AV.2.38","abstract":"The effect of temperature on a single-junction a-Si, grid-connected, photovoltaic (PV) system installed in Cyprus was analysed in this study. Initially, the energy yield losses due to temperature were investigated based on acquired measurements of module temperature and using the manufacturer's maximum power point (MPP) temperature coefficients, $\\ gamma$PMPP. The same thermal loss investigation was also carried out, using the experimentally evaluated $\\ gamma$PMPP coefficients for comparison. In the case of the manufacturer's $\\ gamma$PMPP, the results showed that the thermal losses in the annual dc energy yield were 3 - 4 \\%\\. Similar thermal losses were found when using the experimentally evaluated $\\ gamma$PMPP. In addition, temperature effects on the seasonal performance were evident on the monthly average performance ratio (PR) values. An increase in performance from spring until early autumn was observed and was attributed to thermal annealing. The effect of thermal annealing on the performance was revealed by filtering dc MPP power measurements at high irradiance (greater than 800 W/m2) and restricting the values at geometric air mass (AM) in the range 1 $≤$ geometric AM $≤$ 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer's $\\ gamma$PMPP for a period of two years. The effect of thermal annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 $≤$ geometric AM $≤$ 1.6 in order to minimize the spectral effects on the performance of the a-Si system. The results showed that thermal annealing caused a 7.5 \\%\\ increase in power from March to September 2008 and a 7 \\%\\ increase for the same period in 2009.","copyright":"All rights reserved","keywords":"amorphous silicon,Grid-connected,Thermal annealing,thermal losses","file":"/home/alexis/Zotero/storage/6XX48Z6R/Makrides et al. - 2011 - Temperature and thermal annealing effects on amorp.pdf","bibtex":"@inproceedings{makridesTemperatureThermalAnnealing2011,\n title = {Temperature and Thermal Annealing Effects on Amorphous Silicon {{PV}}},\n booktitle = {26th {{EU-PVSEC}}},\n author = {Makrides, George and Zinsser, Bastian and Phinikarides, Alexander and Schubert, Markus and Georghiou, George E},\n year = {2011},\n pages = {3600--3603},\n address = {{Hamburg, Germany}},\n doi = {10.4229/26thEUPVSEC2011-4AV.2.38},\n abstract = {The effect of temperature on a single-junction a-Si, grid-connected, photovoltaic (PV) system installed in Cyprus was analysed in this study. Initially, the energy yield losses due to temperature were investigated based on acquired measurements of module temperature and using the manufacturer's maximum power point (MPP) temperature coefficients, \\$\\textbackslash gamma\\$PMPP. The same thermal loss investigation was also carried out, using the experimentally evaluated \\$\\textbackslash gamma\\$PMPP coefficients for comparison. In the case of the manufacturer's \\$\\textbackslash gamma\\$PMPP, the results showed that the thermal losses in the annual dc energy yield were 3 - 4 \\{\\%\\}. Similar thermal losses were found when using the experimentally evaluated \\$\\textbackslash gamma\\$PMPP. In addition, temperature effects on the seasonal performance were evident on the monthly average performance ratio (PR) values. An increase in performance from spring until early autumn was observed and was attributed to thermal annealing. The effect of thermal annealing on the performance was revealed by filtering dc MPP power measurements at high irradiance (greater than 800 W/m2) and restricting the values at geometric air mass (AM) in the range 1 {$\\leq$} geometric AM {$\\leq$} 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer's \\$\\textbackslash gamma\\$PMPP for a period of two years. The effect of thermal annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 {$\\leq$} geometric AM {$\\leq$} 1.6 in order to minimize the spectral effects on the performance of the a-Si system. The results showed that thermal annealing caused a 7.5 \\{\\%\\} increase in power from March to September 2008 and a 7 \\{\\%\\} increase for the same period in 2009.},\n copyright = {All rights reserved},\n keywords = {amorphous silicon,Grid-connected,Thermal annealing,thermal losses},\n file = {/home/alexis/Zotero/storage/6XX48Z6R/Makrides et al. - 2011 - Temperature and thermal annealing effects on amorp.pdf}\n}\n\n","author_short":["Makrides, G.","Zinsser, B.","Phinikarides, A.","Schubert, M.","Georghiou, G. 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