Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls. Mancini, L., Hernández-Maldonado, D. b, Lefebvre, W., Houard, J., Blum, I., Vurpillot, F., Eymery, J., Durand, C., Tchernycheva, M., & Rigutti, L. Applied Physics Letters, 2016. cited By 0
Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls [link]Paper  doi  abstract   bibtex   
The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping. © 2016 AIP Publishing LLC.
@ARTICLE{Mancini2016,
author={Mancini, L.a  and Hernández-Maldonado, D.a  b  and Lefebvre, W.a  and Houard, J.a  and Blum, I.a  and Vurpillot, F.a  and Eymery, J.c  and Durand, C.c  and Tchernycheva, M.d  and Rigutti, L.a },
title={Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls},
journal={Applied Physics Letters},
year={2016},
volume={108},
number={4},
doi={10.1063/1.4940748},
art_number={042102},
note={cited By 0},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-84957013268&partnerID=40&md5=592cb0d2ce5bc1fc4ce54a3b0b01522b},
affiliation={Groupe de Physique des Matériaux, UMR, CNRS 6634, Normandie University, INSA, University of Rouen, St Etienne du Rouvray, France; SuperSTEM STFC Daresbury Laboratories, Warrington, United Kingdom; CEA, CNRS, Université Grenoble Alpes, Grenoble, France; Institut d'Electronique Fondamentale, UMR, CNRS 8622, University Paris Saclay, Orsay, France},
abstract={The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping. © 2016 AIP Publishing LLC.},
document_type={Article},
source={Scopus},
}
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