Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy. Martin, G., Botchkarev, A., Rockett, A., & Morkoç, H. Applied Physics Letters, 1995. doi abstract bibtex The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward-backward asymmetry was observed in the InN/GaN-GaN/InN and InN/AlN-AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. © 1996 American Institute of Physics.
@article{martin_valence-band_1995,
title = {Valence-band discontinuities of wurtzite {GaN}, {AlN}, and {InN} heterojunctions measured by x-ray photoemission spectroscopy},
issn = {00036951},
doi = {10.1063/1.116177},
abstract = {The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward-backward asymmetry was observed in the InN/GaN-GaN/InN and InN/AlN-AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. © 1996 American Institute of Physics.},
journal = {Applied Physics Letters},
author = {Martin, G. and Botchkarev, A. and Rockett, A. and Morkoç, H.},
year = {1995},
pages = {2541},
}
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{"_id":"GqE6FCttrthw6Gf5Y","bibbaseid":"martin-botchkarev-rockett-morko-valencebanddiscontinuitiesofwurtziteganalnandinnheterojunctionsmeasuredbyxrayphotoemissionspectroscopy-1995","author_short":["Martin, G.","Botchkarev, A.","Rockett, A.","Morkoç, H."],"bibdata":{"bibtype":"article","type":"article","title":"Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy","issn":"00036951","doi":"10.1063/1.116177","abstract":"The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward-backward asymmetry was observed in the InN/GaN-GaN/InN and InN/AlN-AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. © 1996 American Institute of Physics.","journal":"Applied Physics Letters","author":[{"propositions":[],"lastnames":["Martin"],"firstnames":["G."],"suffixes":[]},{"propositions":[],"lastnames":["Botchkarev"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Rockett"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Morkoç"],"firstnames":["H."],"suffixes":[]}],"year":"1995","pages":"2541","bibtex":"@article{martin_valence-band_1995,\n\ttitle = {Valence-band discontinuities of wurtzite {GaN}, {AlN}, and {InN} heterojunctions measured by x-ray photoemission spectroscopy},\n\tissn = {00036951},\n\tdoi = {10.1063/1.116177},\n\tabstract = {The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward-backward asymmetry was observed in the InN/GaN-GaN/InN and InN/AlN-AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. © 1996 American Institute of Physics.},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Martin, G. and Botchkarev, A. and Rockett, A. and Morkoç, H.},\n\tyear = {1995},\n\tpages = {2541},\n}\n\n","author_short":["Martin, G.","Botchkarev, A.","Rockett, A.","Morkoç, H."],"key":"martin_valence-band_1995","id":"martin_valence-band_1995","bibbaseid":"martin-botchkarev-rockett-morko-valencebanddiscontinuitiesofwurtziteganalnandinnheterojunctionsmeasuredbyxrayphotoemissionspectroscopy-1995","role":"author","urls":{},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/rwellen","dataSources":["74aQfjv6gMLQcjo4z"],"keywords":[],"search_terms":["valence","band","discontinuities","wurtzite","gan","aln","inn","heterojunctions","measured","ray","photoemission","spectroscopy","martin","botchkarev","rockett","morkoç"],"title":"Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy","year":1995}