Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy. Martin, G., Botchkarev, A., Rockett, A., & Morkoç, H. Applied Physics Letters, 1995.
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The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward-backward asymmetry was observed in the InN/GaN-GaN/InN and InN/AlN-AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. © 1996 American Institute of Physics.
@article{martin_valence-band_1995,
	title = {Valence-band discontinuities of wurtzite {GaN}, {AlN}, and {InN} heterojunctions measured by x-ray photoemission spectroscopy},
	issn = {00036951},
	doi = {10.1063/1.116177},
	abstract = {The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward-backward asymmetry was observed in the InN/GaN-GaN/InN and InN/AlN-AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. © 1996 American Institute of Physics.},
	journal = {Applied Physics Letters},
	author = {Martin, G. and Botchkarev, A. and Rockett, A. and Morkoç, H.},
	year = {1995},
	pages = {2541},
}

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