Grain size independence of giant dielectric permittivity of CaCu3Ti4-xScxO12 ceramics. Meeporn, K., Yamwong, T., Pinitsoontorn, S., Amornkitbamrung, V., & Thongbai, P. CERAMICS INTERNATIONAL, 40(10, A):15897-15906, DEC, 2014.
doi  abstract   bibtex   
The dielectric and electrical properties of CaCu3Ti4-xScxO12 (x = 0, 0.04, 0.08, and 0.20) ceramics prepared by a solid-state reaction method were investigated. Grain sizes of CaCu3Ti4O12 were greatly reduced by doping with Sc3+. Surprisingly, the dielectric constant of CaCu3Ti4-xScxO12 ceramics with x=0-0.08 largely increased as the mean grain size decreased. This behavior was extremely hard to produce in CaCu3Ti4O12 ceramics. The nonlinear current voltage properties CaCu3Ti4-xScxO12 ceramics were significantly degraded. The grain boundary (GB) resistance decreased with increasing Sc3+ concentration even though the density of GB layer increased. This resulted in enhancement of a low-frequency loss tangent due to increased dc conduction. Substitution of some Sc3+ ions into Cu sites was proposed as the cause of reduction of the potential barrier height at GBs. The possible mechanisms of giant dielectric response in CaCu3Ti4O12 ceramics are discussed. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
@article{ ISI:000343353600062,
Author = {Meeporn, Keerati and Yamwong, Teerapon and Pinitsoontorn, Supree and
   Amornkitbamrung, Vittaya and Thongbai, Prasit},
Title = {{Grain size independence of giant dielectric permittivity of
   CaCu3Ti4-xScxO12 ceramics}},
Journal = {{CERAMICS INTERNATIONAL}},
Year = {{2014}},
Volume = {{40}},
Number = {{10, A}},
Pages = {{15897-15906}},
Month = {{DEC}},
Abstract = {{The dielectric and electrical properties of CaCu3Ti4-xScxO12 (x = 0,
   0.04, 0.08, and 0.20) ceramics prepared by a solid-state reaction method
   were investigated. Grain sizes of CaCu3Ti4O12 were greatly reduced by
   doping with Sc3+. Surprisingly, the dielectric constant of
   CaCu3Ti4-xScxO12 ceramics with x=0-0.08 largely increased as the mean
   grain size decreased. This behavior was extremely hard to produce in
   CaCu3Ti4O12 ceramics. The nonlinear current voltage properties
   CaCu3Ti4-xScxO12 ceramics were significantly degraded. The grain
   boundary (GB) resistance decreased with increasing Sc3+ concentration
   even though the density of GB layer increased. This resulted in
   enhancement of a low-frequency loss tangent due to increased dc
   conduction. Substitution of some Sc3+ ions into Cu sites was proposed as
   the cause of reduction of the potential barrier height at GBs. The
   possible mechanisms of giant dielectric response in CaCu3Ti4O12 ceramics
   are discussed. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights
   reserved.}},
DOI = {{10.1016/j.ceramint.2014.07.118}},
ISSN = {{0272-8842}},
EISSN = {{1873-3956}},
Unique-ID = {{ISI:000343353600062}},
}

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