Grain size independence of giant dielectric permittivity of CaCu3Ti4-xScxO12 ceramics. Meeporn, K., Yamwong, T., Pinitsoontorn, S., Amornkitbamrung, V., & Thongbai, P. CERAMICS INTERNATIONAL, 40(10, A):15897-15906, DEC, 2014. doi abstract bibtex The dielectric and electrical properties of CaCu3Ti4-xScxO12 (x = 0, 0.04, 0.08, and 0.20) ceramics prepared by a solid-state reaction method were investigated. Grain sizes of CaCu3Ti4O12 were greatly reduced by doping with Sc3+. Surprisingly, the dielectric constant of CaCu3Ti4-xScxO12 ceramics with x=0-0.08 largely increased as the mean grain size decreased. This behavior was extremely hard to produce in CaCu3Ti4O12 ceramics. The nonlinear current voltage properties CaCu3Ti4-xScxO12 ceramics were significantly degraded. The grain boundary (GB) resistance decreased with increasing Sc3+ concentration even though the density of GB layer increased. This resulted in enhancement of a low-frequency loss tangent due to increased dc conduction. Substitution of some Sc3+ ions into Cu sites was proposed as the cause of reduction of the potential barrier height at GBs. The possible mechanisms of giant dielectric response in CaCu3Ti4O12 ceramics are discussed. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
@article{ ISI:000343353600062,
Author = {Meeporn, Keerati and Yamwong, Teerapon and Pinitsoontorn, Supree and
Amornkitbamrung, Vittaya and Thongbai, Prasit},
Title = {{Grain size independence of giant dielectric permittivity of
CaCu3Ti4-xScxO12 ceramics}},
Journal = {{CERAMICS INTERNATIONAL}},
Year = {{2014}},
Volume = {{40}},
Number = {{10, A}},
Pages = {{15897-15906}},
Month = {{DEC}},
Abstract = {{The dielectric and electrical properties of CaCu3Ti4-xScxO12 (x = 0,
0.04, 0.08, and 0.20) ceramics prepared by a solid-state reaction method
were investigated. Grain sizes of CaCu3Ti4O12 were greatly reduced by
doping with Sc3+. Surprisingly, the dielectric constant of
CaCu3Ti4-xScxO12 ceramics with x=0-0.08 largely increased as the mean
grain size decreased. This behavior was extremely hard to produce in
CaCu3Ti4O12 ceramics. The nonlinear current voltage properties
CaCu3Ti4-xScxO12 ceramics were significantly degraded. The grain
boundary (GB) resistance decreased with increasing Sc3+ concentration
even though the density of GB layer increased. This resulted in
enhancement of a low-frequency loss tangent due to increased dc
conduction. Substitution of some Sc3+ ions into Cu sites was proposed as
the cause of reduction of the potential barrier height at GBs. The
possible mechanisms of giant dielectric response in CaCu3Ti4O12 ceramics
are discussed. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights
reserved.}},
DOI = {{10.1016/j.ceramint.2014.07.118}},
ISSN = {{0272-8842}},
EISSN = {{1873-3956}},
Unique-ID = {{ISI:000343353600062}},
}
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