Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps. Meinshausen, L.; Frémont, H.; Weide-Zaage, K.; and Plano, B. Microelectronics Reliability, 55(1):192-200, 2015.
Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps. [link]Link  Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps. [link]Paper  bibtex   
@article{ journals/mr/MeinshausenFWP15,
  added-at = {2015-03-27T00:00:00.000+0100},
  author = {Meinshausen, Lutz and Frémont, Hélène and Weide-Zaage, Kirsten and Plano, Bernard},
  biburl = {http://www.bibsonomy.org/bibtex/21d34a5ed1618ba3db39efe3ced1df832/dblp},
  ee = {http://dx.doi.org/10.1016/j.microrel.2014.09.030},
  interhash = {48e9e7d892e8919ff9fe52269ca725a6},
  intrahash = {1d34a5ed1618ba3db39efe3ced1df832},
  journal = {Microelectronics Reliability},
  keywords = {dblp},
  number = {1},
  pages = {192-200},
  title = {Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps.},
  url = {http://dblp.uni-trier.de/db/journals/mr/mr55.html#MeinshausenFWP15},
  volume = {55},
  year = {2015}
}
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