@ARTICLE{Manuel201627,
author={Mánuel, J.M.a  and Koch, C.T.b  and Özdöl, V.B.c  and Sigle, W.d  and Van Aken, P.A.d  and García, R.a  and Morales, F.M.a },
title={Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy},
journal={Journal of Microscopy},
year={2016},
volume={261},
number={1},
pages={27-35},
doi={10.1111/jmi.12312},
note={cited By 1},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-84951566810&partnerID=40&md5=3459789256cb7ac5f913d5a72c5e062f},
affiliation={IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cadiz, Cádiz, Spain; Department of Physics, Humboldt University, Berlin, Germany; National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA, United States; Stuttgart Center for Electron Microscopy, Max Planck Institute for Solid State Research, Germany},
abstract={We present the use of (1) dark-field inline electron holography for measuring the structural strain, and indirectly obtaining the composition, in a wurtzite, 4-nm-thick InAlGaN epilayer on a AlN/GaN/AlN/GaN multinano-layer heterosystem, and (2) valence electron energy-loss spectroscopy to study the bandgap value of five different, also hexagonal, 20-50-nm-thick InAlGaN layers. The measured strain values were almost identical to the ones obtained by other techniques for similarly grown materials. We found that the biaxial strain in the III-N alloys lowers the bandgap energy as compared to the value calculated with different known expressions and bowing parameters for unstrained layers. By contrast, calculated and experimental values agreed in the case of lattice-matched (almost unstrained) heterostructures. © 2015 Royal Microscopical Society.},
author_keywords={Dark-field inline holography;  InAlGaN;  Nitride bandgap;  Strain;  TEM;  VEELS},
document_type={Article},
source={Scopus},
}

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The measured strain values were almost identical to the ones obtained by other techniques for similarly grown materials. We found that the biaxial strain in the III-N alloys lowers the bandgap energy as compared to the value calculated with different known expressions and bowing parameters for unstrained layers. By contrast, calculated and experimental values agreed in the case of lattice-matched (almost unstrained) heterostructures. © 2015 Royal Microscopical Society.","author_keywords":"Dark-field inline holography; InAlGaN; Nitride bandgap; Strain; TEM; VEELS","document_type":"Article","source":"Scopus","bibtex":"@ARTICLE{Manuel201627,\r\nauthor={Mánuel, J.M.a and Koch, C.T.b and Özdöl, V.B.c and Sigle, W.d and Van Aken, P.A.d and García, R.a and Morales, F.M.a },\r\ntitle={Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy},\r\njournal={Journal of Microscopy},\r\nyear={2016},\r\nvolume={261},\r\nnumber={1},\r\npages={27-35},\r\ndoi={10.1111/jmi.12312},\r\nnote={cited By 1},\r\nurl={https://www.scopus.com/inward/record.uri?eid=2-s2.0-84951566810&partnerID=40&md5=3459789256cb7ac5f913d5a72c5e062f},\r\naffiliation={IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cadiz, Cádiz, Spain; Department of Physics, Humboldt University, Berlin, Germany; National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA, United States; Stuttgart Center for Electron Microscopy, Max Planck Institute for Solid State Research, Germany},\r\nabstract={We present the use of (1) dark-field inline electron holography for measuring the structural strain, and indirectly obtaining the composition, in a wurtzite, 4-nm-thick InAlGaN epilayer on a AlN/GaN/AlN/GaN multinano-layer heterosystem, and (2) valence electron energy-loss spectroscopy to study the bandgap value of five different, also hexagonal, 20-50-nm-thick InAlGaN layers. 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