@article{mollick_synthesis_2014,
	title = {Synthesis of {SiGe} layered structure in single crystalline {Ge} substrate by low energy {Si} ion implantation},
	volume = {101},
	issn = {0042-207X},
	doi = {10.1016/j.vacuum.2013.10.016},
	abstract = {Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrometry reveal the formation of a thin Si-rich crystalline layer in the near-surface region. The micro-Raman spectroscopy and X-ray reflectivity techniques were used to determine the composition and strain in SiGe alloy layers. The photoluminescence measurements of the annealed samples showed a broad emission, peaking around 500 nm. The peak intensity is, however, dependent on the bombarding fluence. (C) 2013 Elsevier Ltd. All rights reserved.},
	language = {English},
	journal = {Vacuum},
	author = {Mollick, S. A. and Ghose, D. and Bhattacharyya, S. R. and Bhunia, S. and Ray, N. R. and Ranjan, M.},
	month = mar,
	year = {2014},
	note = {WOS:000330143000073},
	keywords = {Diffusion, Germanium, Ion implantation, Nanostructures, Photoluminescence, Raman spectroscopy, SiGe, TEM, alloys, growth, pressure, relaxation, silicon, temperature},
	pages = {387--393},
}

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