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@ARTICLE{Monteduro2016,
author={Monteduro, A.G. and Ameer, Z. and Rizzato, S. and Martino, M. and Caricato, A.P. and Tasco, V. and Lekshmi, I.C. and Hazarika, A. and Choudhury, D. and Sarma, D.D. and Maruccio, G.},
title={Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics},
journal={Journal of Physics D: Applied Physics},
year={2016},
volume={49},
number={40},
doi={10.1088/0022-3727/49/40/405303},
art_number={405303},
note={cited By 3},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988976795&doi=10.1088%2f0022-3727%2f49%2f40%2f405303&partnerID=40&md5=234c2ae1152aef86033687706b991027},
abstract={Nearly amorphous high-k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6 × 10-10 S cm-1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. © 2016 IOP Publishing Ltd.},
publisher={Institute of Physics Publishing},
issn={00223727},
coden={JPAPB},
document_type={Article},
source={Scopus},
}