Dynamics of hydrogenated amorphous silicon flexural resonators for enhanced performance. Mouro, J., Chu, V., & Conde, J. P. JOURNAL OF APPLIED PHYSICS, APR 21, 2016. doi abstract bibtex Hydrogenated amorphous silicon thin-film flexural resonators with sub-micron actuation gaps are fabricated by surface micromachining on glass substrates. Experimentally, the resonators are electrostatically actuated and their motion is optically detected. Three different configurations for the electrostatic excitation force are used to study the dynamics of the resonators. In the first case, a dc voltage (V-dc) is added to an ac voltage with variable excitation frequency (V-ac(omega)) and harmonic, superharmonic, and subharmonic resonances of different orders are observed. The second case consists on mixing the dc voltage (V-dc) with an ac voltage applied at a fixed frequency of twice the natural frequency of the resonator (V(2 omega(0))). High-amplitude parametric resonance is excited at the natural frequency of the system, omega(0). This configuration allows a separation between the frequencies of the excitation and the mechanical motion. Finally, in the third case, the dc voltage (V-dc) is combined with both ac voltages, V-ac(omega) and V(2 omega(0)), and parametric resonance is excited and emerges from the fundamental harmonic resonance peak. The single-degree-of-freedom equation of motion is modeled and discussed for each case. The nonlinearity inherent to the electrostatic force is responsible for modulating the spring constant of the system at different frequencies, giving rise to parametric resonance. These equations of motion are simulated in the time and frequency domains, providing a consistent explanation of the experimentally observed phenomena. A wide variety of possible resonance modes with different characteristics can be used advantageously in MEMS device design. Published by AIP Publishing.
@article{ ISI:000378991800022,
Author = {Mouro, J. and Chu, V. and Conde, J. P.},
Title = {{Dynamics of hydrogenated amorphous silicon flexural resonators for
enhanced performance}},
Journal = {{JOURNAL OF APPLIED PHYSICS}},
Year = {{2016}},
Volume = {{119}},
Number = {{15}},
Month = {{APR 21}},
Abstract = {{Hydrogenated amorphous silicon thin-film flexural resonators with
sub-micron actuation gaps are fabricated by surface micromachining on
glass substrates. Experimentally, the resonators are electrostatically
actuated and their motion is optically detected. Three different
configurations for the electrostatic excitation force are used to study
the dynamics of the resonators. In the first case, a dc voltage (V-dc)
is added to an ac voltage with variable excitation frequency
(V-ac(omega)) and harmonic, superharmonic, and subharmonic resonances of
different orders are observed. The second case consists on mixing the dc
voltage (V-dc) with an ac voltage applied at a fixed frequency of twice
the natural frequency of the resonator (V(2 omega(0))). High-amplitude
parametric resonance is excited at the natural frequency of the system,
omega(0). This configuration allows a separation between the frequencies
of the excitation and the mechanical motion. Finally, in the third case,
the dc voltage (V-dc) is combined with both ac voltages, V-ac(omega) and
V(2 omega(0)), and parametric resonance is excited and emerges from the
fundamental harmonic resonance peak. The single-degree-of-freedom
equation of motion is modeled and discussed for each case. The
nonlinearity inherent to the electrostatic force is responsible for
modulating the spring constant of the system at different frequencies,
giving rise to parametric resonance. These equations of motion are
simulated in the time and frequency domains, providing a consistent
explanation of the experimentally observed phenomena. A wide variety of
possible resonance modes with different characteristics can be used
advantageously in MEMS device design. Published by AIP Publishing.}},
DOI = {{10.1063/1.4946040}},
Article-Number = {{154501}},
ISSN = {{0021-8979}},
EISSN = {{1089-7550}},
ResearcherID-Numbers = {{Conde, Joao Pedro/F-8533-2012
Chu, Virginia/I-6048-2014
}},
ORCID-Numbers = {{Conde, Joao Pedro/0000-0002-5677-3024
Chu, Virginia/0000-0002-5306-4409
Mouro, Joao/0000-0002-2572-0974}},
Unique-ID = {{ISI:000378991800022}},
}
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Three different configurations for the electrostatic excitation force are used to study the dynamics of the resonators. In the first case, a dc voltage (V-dc) is added to an ac voltage with variable excitation frequency (V-ac(omega)) and harmonic, superharmonic, and subharmonic resonances of different orders are observed. The second case consists on mixing the dc voltage (V-dc) with an ac voltage applied at a fixed frequency of twice the natural frequency of the resonator (V(2 omega(0))). High-amplitude parametric resonance is excited at the natural frequency of the system, omega(0). This configuration allows a separation between the frequencies of the excitation and the mechanical motion. Finally, in the third case, the dc voltage (V-dc) is combined with both ac voltages, V-ac(omega) and V(2 omega(0)), and parametric resonance is excited and emerges from the fundamental harmonic resonance peak. The single-degree-of-freedom equation of motion is modeled and discussed for each case. The nonlinearity inherent to the electrostatic force is responsible for modulating the spring constant of the system at different frequencies, giving rise to parametric resonance. These equations of motion are simulated in the time and frequency domains, providing a consistent explanation of the experimentally observed phenomena. A wide variety of possible resonance modes with different characteristics can be used advantageously in MEMS device design. Published by AIP Publishing.","doi":"10.1063/1.4946040","article-number":"154501","issn":"0021-8979","eissn":"1089-7550","researcherid-numbers":"Conde, Joao Pedro/F-8533-2012 Chu, Virginia/I-6048-2014 ","orcid-numbers":"Conde, Joao Pedro/0000-0002-5677-3024 Chu, Virginia/0000-0002-5306-4409 Mouro, Joao/0000-0002-2572-0974","unique-id":"ISI:000378991800022","bibtex":"@article{ ISI:000378991800022,\nAuthor = {Mouro, J. and Chu, V. and Conde, J. P.},\nTitle = {{Dynamics of hydrogenated amorphous silicon flexural resonators for\n enhanced performance}},\nJournal = {{JOURNAL OF APPLIED PHYSICS}},\nYear = {{2016}},\nVolume = {{119}},\nNumber = {{15}},\nMonth = {{APR 21}},\nAbstract = {{Hydrogenated amorphous silicon thin-film flexural resonators with\n sub-micron actuation gaps are fabricated by surface micromachining on\n glass substrates. Experimentally, the resonators are electrostatically\n actuated and their motion is optically detected. Three different\n configurations for the electrostatic excitation force are used to study\n the dynamics of the resonators. In the first case, a dc voltage (V-dc)\n is added to an ac voltage with variable excitation frequency\n (V-ac(omega)) and harmonic, superharmonic, and subharmonic resonances of\n different orders are observed. The second case consists on mixing the dc\n voltage (V-dc) with an ac voltage applied at a fixed frequency of twice\n the natural frequency of the resonator (V(2 omega(0))). High-amplitude\n parametric resonance is excited at the natural frequency of the system,\n omega(0). This configuration allows a separation between the frequencies\n of the excitation and the mechanical motion. Finally, in the third case,\n the dc voltage (V-dc) is combined with both ac voltages, V-ac(omega) and\n V(2 omega(0)), and parametric resonance is excited and emerges from the\n fundamental harmonic resonance peak. The single-degree-of-freedom\n equation of motion is modeled and discussed for each case. The\n nonlinearity inherent to the electrostatic force is responsible for\n modulating the spring constant of the system at different frequencies,\n giving rise to parametric resonance. These equations of motion are\n simulated in the time and frequency domains, providing a consistent\n explanation of the experimentally observed phenomena. A wide variety of\n possible resonance modes with different characteristics can be used\n advantageously in MEMS device design. Published by AIP Publishing.}},\nDOI = {{10.1063/1.4946040}},\nArticle-Number = {{154501}},\nISSN = {{0021-8979}},\nEISSN = {{1089-7550}},\nResearcherID-Numbers = {{Conde, Joao Pedro/F-8533-2012\n Chu, Virginia/I-6048-2014\n }},\nORCID-Numbers = {{Conde, Joao Pedro/0000-0002-5677-3024\n Chu, Virginia/0000-0002-5306-4409\n Mouro, Joao/0000-0002-2572-0974}},\nUnique-ID = {{ISI:000378991800022}},\n}\n\n","author_short":["Mouro, J.","Chu, V.","Conde, J. 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