Electrical parameters degradation law of MOSFET during ageing. Mourrain, C., Tourniol, C., & Bouzid, M. Microelectronics Reliability, 38(6-8):1115–1119, Elsevier BV, June, 1998.
doi  bibtex   
@Article{         Mourrain_1998aa,
  author        = {Mourrain, Ch. and Tourniol, Ch. and Bouzid, M.J.},
  citable       = {1},
  doi           = {10.1016/s0026-2714(98)00139-5},
  file          = {Mourrain_1998aa.pdf},
  group         = {casper},
  internal      = {0},
  issn          = {0026-2714},
  journal       = {Microelectronics Reliability},
  keywords      = {aging,reliability,electronics,mosfet},
  langid        = {english},
  month         = jun,
  number        = {6-8},
  pages         = {1115–1119},
  publisher     = {Elsevier BV},
  title         = {Electrical parameters degradation law of {MOSFET} during ageing},
  volume        = {38},
  year          = {1998},
  shortjournal  = {Microelectron. Reliab.}
}

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