Process–Structure–Properties Relationships of Passivating, Electron-Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus-Doped Polysilicon. Mousumi, J. F., Gregory, G., Ganesan, J. P., Nunez, C., Provancha, K., Seren, S., Zunft, H., Jurca, T., Banerjee, P., Kar, A., & others physica status solidi (RRL)–Rapid Research Letters, 16(5):2100639, 2022.
bibtex   
@article{mousumi2022process,
  title={Process--Structure--Properties Relationships of Passivating, Electron-Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus-Doped Polysilicon},
  author={Mousumi, Jannatul Ferdous and Gregory, Geoffrey and Ganesan, Jeya Prakash and Nunez, Christian and Provancha, Kenneth and Seren, Sven and Zunft, Heiko and Jurca, Titel and Banerjee, Parag and Kar, Aravinda and others},
  journal={physica status solidi (RRL)--Rapid Research Letters},
  volume={16},
  number={5},
  pages={2100639},
  year={2022}
}

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