@article{MarquezNavarro2024,
abstract = {Copper-nitride (Cu (Formula presented.) N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu (Formula presented.) N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu (Formula presented.) N thin film layers were studied by UV-MIR (0.2–40 (Formula presented.) m) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu (Formula presented.) N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, (Formula presented.), varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.},
author = {M{\'{a}}rquez, Emilio and Blanco, Eduardo and M{\'{a}}nuel, Jos{\'{e}} M. and Ballester, Manuel and Garc{\'{i}}a-Gurrea, Marcos and Rodr{\'{i}}guez-Tapiador, Mar{\'{i}}a I. and Fern{\'{a}}ndez, Susana M. and Willomitzer, Florian and Katsaggelos, Aggelos K.},
doi = {10.3390/coatings14010005},
issn = {20796412},
journal = {Coatings},
keywords = {,electron microscopy,optical properties,solar energy,spectroscopic ellipsometry,thin films},
number = {1},
pages = {5},
publisher = {MDPI},
title = {{Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity}},
volume = {14},
year = {2024}
}

{"_id":"JFFPucWbLrtHybRNg","bibbaseid":"mrquez-blanco-mnuel-ballester-garciagurrea-rodrigueztapiador-fernndez-willomitzer-etal-midinfraredmircomplexrefractiveindexspectraofpolycrystallinecoppernitridefilmsbyirvaseellipsometryandtheirfibsemporosity-2024","author_short":["Márquez, E.","Blanco, E.","Mánuel, J. M.","Ballester, M.","García-Gurrea, M.","Rodríguez-Tapiador, M. I.","Fernández, S. M.","Willomitzer, F.","Katsaggelos, A. K."],"bibdata":{"bibtype":"article","type":"article","abstract":"Copper-nitride (Cu (Formula presented.) N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu (Formula presented.) N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu (Formula presented.) N thin film layers were studied by UV-MIR (0.2–40 (Formula presented.) m) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu (Formula presented.) N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, (Formula presented.), varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.","author":[{"propositions":[],"lastnames":["Márquez"],"firstnames":["Emilio"],"suffixes":[]},{"propositions":[],"lastnames":["Blanco"],"firstnames":["Eduardo"],"suffixes":[]},{"propositions":[],"lastnames":["Mánuel"],"firstnames":["José","M."],"suffixes":[]},{"propositions":[],"lastnames":["Ballester"],"firstnames":["Manuel"],"suffixes":[]},{"propositions":[],"lastnames":["García-Gurrea"],"firstnames":["Marcos"],"suffixes":[]},{"propositions":[],"lastnames":["Rodríguez-Tapiador"],"firstnames":["María","I."],"suffixes":[]},{"propositions":[],"lastnames":["Fernández"],"firstnames":["Susana","M."],"suffixes":[]},{"propositions":[],"lastnames":["Willomitzer"],"firstnames":["Florian"],"suffixes":[]},{"propositions":[],"lastnames":["Katsaggelos"],"firstnames":["Aggelos","K."],"suffixes":[]}],"doi":"10.3390/coatings14010005","issn":"20796412","journal":"Coatings","keywords":",electron microscopy,optical properties,solar energy,spectroscopic ellipsometry,thin films","number":"1","pages":"5","publisher":"MDPI","title":"Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity","volume":"14","year":"2024","bibtex":"@article{MarquezNavarro2024,\nabstract = {Copper-nitride (Cu (Formula presented.) N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu (Formula presented.) N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu (Formula presented.) N thin film layers were studied by UV-MIR (0.2–40 (Formula presented.) m) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu (Formula presented.) N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, (Formula presented.), varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.},\nauthor = {M{\\'{a}}rquez, Emilio and Blanco, Eduardo and M{\\'{a}}nuel, Jos{\\'{e}} M. and Ballester, Manuel and Garc{\\'{i}}a-Gurrea, Marcos and Rodr{\\'{i}}guez-Tapiador, Mar{\\'{i}}a I. and Fern{\\'{a}}ndez, Susana M. and Willomitzer, Florian and Katsaggelos, Aggelos K.},\ndoi = {10.3390/coatings14010005},\nissn = {20796412},\njournal = {Coatings},\nkeywords = {,electron microscopy,optical properties,solar energy,spectroscopic ellipsometry,thin films},\nnumber = {1},\npages = {5},\npublisher = {MDPI},\ntitle = {{Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity}},\nvolume = {14},\nyear = {2024}\n}\n","author_short":["Márquez, E.","Blanco, E.","Mánuel, J. M.","Ballester, M.","García-Gurrea, M.","Rodríguez-Tapiador, M. I.","Fernández, S. M.","Willomitzer, F.","Katsaggelos, A. K."],"key":"MarquezNavarro2024","id":"MarquezNavarro2024","bibbaseid":"mrquez-blanco-mnuel-ballester-garciagurrea-rodrigueztapiador-fernndez-willomitzer-etal-midinfraredmircomplexrefractiveindexspectraofpolycrystallinecoppernitridefilmsbyirvaseellipsometryandtheirfibsemporosity-2024","role":"author","urls":{},"keyword":["","electron microscopy","optical properties","solar energy","spectroscopic ellipsometry","thin films"],"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://sites.northwestern.edu/ivpl/files/2025/05/AIM-IVPL_publons_May2025.bib","dataSources":["teJzFLHexaz5AQW5z","taz5xnPrcQTmMdtqr"],"keywords":["","electron microscopy","optical properties","solar energy","spectroscopic ellipsometry","thin films"],"search_terms":["mid","infrared","mir","complex","refractive","index","spectra","polycrystalline","copper","nitride","films","vase","ellipsometry","fib","sem","porosity","márquez","blanco","mánuel","ballester","garcía-gurrea","rodríguez-tapiador","fernández","willomitzer","katsaggelos"],"title":"Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity","year":2024}