Optimization of n[sup +] mu c-Si:H contact layer for low leakage current in a-Si:H thin film transistors. Murthy, R. V. R., Servati, P., Nathan, A., & Chamberlain, S. G. In Papers from the ninth canadian semiconductor technology conference, volume 18, pages 685–687, Ottawa, Canada, March, 2000. AVS.
Optimization of n[sup +] mu c-Si:H contact layer for low leakage current in a-Si:H thin film transistors [link]Paper  doi  bibtex   
@inproceedings{murthy_optimization_2000,
	address = {Ottawa, Canada},
	title = {Optimization of n[sup +] mu c-{Si}:{H} contact layer for low leakage current in a-{Si}:{H} thin film transistors},
	volume = {18},
	shorttitle = {Optimization of n[sup +] mu c-{Si}},
	url = {http://link.aip.org/link/?JVA/18/685/1},
	doi = {10.1116/1.582248},
	urldate = {2010-07-09},
	booktitle = {Papers from the ninth canadian semiconductor technology conference},
	publisher = {AVS},
	author = {Murthy, R. V. R. and Servati, P. and Nathan, A. and Chamberlain, S. G.},
	month = mar,
	year = {2000},
	keywords = {chemical interdiffusion, defect states, elemental semiconductors, hydrogen, leakage currents, silicon, thin film transistors},
	pages = {685--687},
}

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