@article{muthe_study_1998,
	title = {A study of the {CuO} phase formation during thin film deposition by molecular beam epitaxy},
	volume = {324},
	issn = {00406090},
	url = {https://linkinghub.elsevier.com/retrieve/pii/S0040609097012030},
	doi = {10.1016/S0040-6090(97)01203-0},
	abstract = {The kinetics of CuO growth under molecular beam epitaxial ŽMBE. conditions has been investigated. The evaporation of Cu and its deposition onto SiŽ111. substrate maintained at 823 K was carried out using an electron beam heated source. For the oxidation of Cu, sources of both molecular and atomic oxygen species were employed. The films were characterized by electron spectroscopy for chemical analysis ŽESCA., X-ray diffraction ŽXRD., infrared ŽIR. transmission and scanning electron microscopy ŽSEM.. The application of a fairly high flux of molecular oxygen Ž3.4 = 1020 moleculesrŽm2 s.. and O2 to Cu flux ratio of ; 250 during the deposition was found to be insufficient to convert a detectable amount of Cu into CuqrCu2q state. On the other hand, Cu2O films could be grown with relative ease by maintaining atomic oxygen flux of 1.6 times the stoichiometric value. In contrast, the kinetics of CuO formation has been found to be quite slow. For atomic oxygen to copper flux ratio of ; 80, only ; 95\% of the copper was found to be in fully oxidized state. q 1998 Elsevier Science S.A. All rights reserved.},
	language = {en},
	number = {1-2},
	urldate = {2021-05-07},
	journal = {Thin Solid Films},
	author = {Muthe, K.P and Vyas, J.C and Narang, Savita N and Aswal, D.K and Gupta, S.K and Bhattacharya, Debarati and Pinto, R and Kothiyal, G.P and Sabharwal, S.C},
	month = jul,
	year = {1998},
	pages = {37--43},
}

{"_id":"4bHvRDyRPHAxdyh43","bibbaseid":"muthe-vyas-narang-aswal-gupta-bhattacharya-pinto-kothiyal-etal-astudyofthecuophaseformationduringthinfilmdepositionbymolecularbeamepitaxy-1998","author_short":["Muthe, K.","Vyas, J.","Narang, S. N","Aswal, D.","Gupta, S.","Bhattacharya, D.","Pinto, R","Kothiyal, G.","Sabharwal, S."],"bibdata":{"bibtype":"article","type":"article","title":"A study of the CuO phase formation during thin film deposition by molecular beam epitaxy","volume":"324","issn":"00406090","url":"https://linkinghub.elsevier.com/retrieve/pii/S0040609097012030","doi":"10.1016/S0040-6090(97)01203-0","abstract":"The kinetics of CuO growth under molecular beam epitaxial ŽMBE. conditions has been investigated. The evaporation of Cu and its deposition onto SiŽ111. substrate maintained at 823 K was carried out using an electron beam heated source. For the oxidation of Cu, sources of both molecular and atomic oxygen species were employed. The films were characterized by electron spectroscopy for chemical analysis ŽESCA., X-ray diffraction ŽXRD., infrared ŽIR. transmission and scanning electron microscopy ŽSEM.. The application of a fairly high flux of molecular oxygen Ž3.4 = 1020 moleculesrŽm2 s.. and O2 to Cu flux ratio of ; 250 during the deposition was found to be insufficient to convert a detectable amount of Cu into CuqrCu2q state. On the other hand, Cu2O films could be grown with relative ease by maintaining atomic oxygen flux of 1.6 times the stoichiometric value. In contrast, the kinetics of CuO formation has been found to be quite slow. For atomic oxygen to copper flux ratio of ; 80, only ; 95% of the copper was found to be in fully oxidized state. q 1998 Elsevier Science S.A. All rights reserved.","language":"en","number":"1-2","urldate":"2021-05-07","journal":"Thin Solid Films","author":[{"propositions":[],"lastnames":["Muthe"],"firstnames":["K.P"],"suffixes":[]},{"propositions":[],"lastnames":["Vyas"],"firstnames":["J.C"],"suffixes":[]},{"propositions":[],"lastnames":["Narang"],"firstnames":["Savita","N"],"suffixes":[]},{"propositions":[],"lastnames":["Aswal"],"firstnames":["D.K"],"suffixes":[]},{"propositions":[],"lastnames":["Gupta"],"firstnames":["S.K"],"suffixes":[]},{"propositions":[],"lastnames":["Bhattacharya"],"firstnames":["Debarati"],"suffixes":[]},{"propositions":[],"lastnames":["Pinto"],"firstnames":["R"],"suffixes":[]},{"propositions":[],"lastnames":["Kothiyal"],"firstnames":["G.P"],"suffixes":[]},{"propositions":[],"lastnames":["Sabharwal"],"firstnames":["S.C"],"suffixes":[]}],"month":"July","year":"1998","pages":"37–43","bibtex":"@article{muthe_study_1998,\n\ttitle = {A study of the {CuO} phase formation during thin film deposition by molecular beam epitaxy},\n\tvolume = {324},\n\tissn = {00406090},\n\turl = {https://linkinghub.elsevier.com/retrieve/pii/S0040609097012030},\n\tdoi = {10.1016/S0040-6090(97)01203-0},\n\tabstract = {The kinetics of CuO growth under molecular beam epitaxial ŽMBE. conditions has been investigated. The evaporation of Cu and its deposition onto SiŽ111. substrate maintained at 823 K was carried out using an electron beam heated source. For the oxidation of Cu, sources of both molecular and atomic oxygen species were employed. The films were characterized by electron spectroscopy for chemical analysis ŽESCA., X-ray diffraction ŽXRD., infrared ŽIR. transmission and scanning electron microscopy ŽSEM.. The application of a fairly high flux of molecular oxygen Ž3.4 = 1020 moleculesrŽm2 s.. and O2 to Cu flux ratio of ; 250 during the deposition was found to be insufficient to convert a detectable amount of Cu into CuqrCu2q state. On the other hand, Cu2O films could be grown with relative ease by maintaining atomic oxygen flux of 1.6 times the stoichiometric value. In contrast, the kinetics of CuO formation has been found to be quite slow. For atomic oxygen to copper flux ratio of ; 80, only ; 95\\% of the copper was found to be in fully oxidized state. q 1998 Elsevier Science S.A. All rights reserved.},\n\tlanguage = {en},\n\tnumber = {1-2},\n\turldate = {2021-05-07},\n\tjournal = {Thin Solid Films},\n\tauthor = {Muthe, K.P and Vyas, J.C and Narang, Savita N and Aswal, D.K and Gupta, S.K and Bhattacharya, Debarati and Pinto, R and Kothiyal, G.P and Sabharwal, S.C},\n\tmonth = jul,\n\tyear = {1998},\n\tpages = {37--43},\n}\n\n","author_short":["Muthe, K.","Vyas, J.","Narang, S. N","Aswal, D.","Gupta, S.","Bhattacharya, D.","Pinto, R","Kothiyal, G.","Sabharwal, S."],"key":"muthe_study_1998","id":"muthe_study_1998","bibbaseid":"muthe-vyas-narang-aswal-gupta-bhattacharya-pinto-kothiyal-etal-astudyofthecuophaseformationduringthinfilmdepositionbymolecularbeamepitaxy-1998","role":"author","urls":{"Paper":"https://linkinghub.elsevier.com/retrieve/pii/S0040609097012030"},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/pmanti","dataSources":["t4G55bmn46QNNuAWs"],"keywords":[],"search_terms":["study","cuo","phase","formation","during","thin","film","deposition","molecular","beam","epitaxy","muthe","vyas","narang","aswal","gupta","bhattacharya","pinto","kothiyal","sabharwal"],"title":"A study of the CuO phase formation during thin film deposition by molecular beam epitaxy","year":1998}