Surface barrier layer effect in (In plus Nb) co-doped TiO2 ceramics: An alternative route to design low dielectric loss. Nachaithong, T., Kidkhunthod, P., Thongbai, P., & Maensiri, S. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 100(4):1452-1459, APR, 2017. doi abstract bibtex Giant dielectric permittivity (epsilon) with low loss tangent (tan) was reported in (In+Nb) co-doped TiO2 ceramics. Either of electron-pinned defect-dipole or internal barrier layer capacitor model was proposed to be the origin of this high dielectric performance. Here, we proposed an effectively alternative route for designing low-tan in co-doped TiO2 ceramics by creating a resistive outer surface layer. A pure rutile-TiO2 phase with a dense microstructure and homogeneous dispersion of dopants was achieved in (In+Nb) co-doped TiO2 ceramics prepared by a simple sol-gel method. Two giant dielectric responses were observed in low- and high-frequency ranges, corresponding to extremely high epsilon approximate to 10(6)-10(7) and large epsilon approximate to 10(4)-10(5), respectively. After annealing in air, a low-frequency dielectric response disappeared and could be restored by removing the outer surface of the annealed sample, indicating the dominant electrode effect in the initial sample. Annealing can cause improved dielectric properties with a temperature- and frequency-independent epsilon value of approximate to 1.9x10(4) and cause a decrease in tan from 0.1 to 0.035. High dielectric performance in (In0.5Nb0.5)(x)Ti1-xO2 ceramics can be achieved by eliminating the electrode effect and forming a resistive outer surface layer.
@article{ ISI:000399610800027,
Author = {Nachaithong, Theeranuch and Kidkhunthod, Pinit and Thongbai, Prasit and
Maensiri, Santi},
Title = {{Surface barrier layer effect in (In plus Nb) co-doped TiO2 ceramics: An
alternative route to design low dielectric loss}},
Journal = {{JOURNAL OF THE AMERICAN CERAMIC SOCIETY}},
Year = {{2017}},
Volume = {{100}},
Number = {{4}},
Pages = {{1452-1459}},
Month = {{APR}},
Abstract = {{Giant dielectric permittivity (epsilon) with low loss tangent (tan) was
reported in (In+Nb) co-doped TiO2 ceramics. Either of electron-pinned
defect-dipole or internal barrier layer capacitor model was proposed to
be the origin of this high dielectric performance. Here, we proposed an
effectively alternative route for designing low-tan in co-doped TiO2
ceramics by creating a resistive outer surface layer. A pure rutile-TiO2
phase with a dense microstructure and homogeneous dispersion of dopants
was achieved in (In+Nb) co-doped TiO2 ceramics prepared by a simple
sol-gel method. Two giant dielectric responses were observed in low- and
high-frequency ranges, corresponding to extremely high epsilon
approximate to 10(6)-10(7) and large epsilon approximate to 10(4)-10(5),
respectively. After annealing in air, a low-frequency dielectric
response disappeared and could be restored by removing the outer surface
of the annealed sample, indicating the dominant electrode effect in the
initial sample. Annealing can cause improved dielectric properties with
a temperature- and frequency-independent epsilon value of approximate to
1.9x10(4) and cause a decrease in tan from 0.1 to 0.035. High dielectric
performance in (In0.5Nb0.5)(x)Ti1-xO2 ceramics can be achieved by
eliminating the electrode effect and forming a resistive outer surface
layer.}},
DOI = {{10.1111/jace.14688}},
ISSN = {{0002-7820}},
EISSN = {{1551-2916}},
Unique-ID = {{ISI:000399610800027}},
}
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Either of electron-pinned defect-dipole or internal barrier layer capacitor model was proposed to be the origin of this high dielectric performance. Here, we proposed an effectively alternative route for designing low-tan in co-doped TiO2 ceramics by creating a resistive outer surface layer. A pure rutile-TiO2 phase with a dense microstructure and homogeneous dispersion of dopants was achieved in (In+Nb) co-doped TiO2 ceramics prepared by a simple sol-gel method. Two giant dielectric responses were observed in low- and high-frequency ranges, corresponding to extremely high epsilon approximate to 10(6)-10(7) and large epsilon approximate to 10(4)-10(5), respectively. After annealing in air, a low-frequency dielectric response disappeared and could be restored by removing the outer surface of the annealed sample, indicating the dominant electrode effect in the initial sample. Annealing can cause improved dielectric properties with a temperature- and frequency-independent epsilon value of approximate to 1.9x10(4) and cause a decrease in tan from 0.1 to 0.035. High dielectric performance in (In0.5Nb0.5)(x)Ti1-xO2 ceramics can be achieved by eliminating the electrode effect and forming a resistive outer surface layer.","doi":"10.1111/jace.14688","issn":"0002-7820","eissn":"1551-2916","unique-id":"ISI:000399610800027","bibtex":"@article{ ISI:000399610800027,\nAuthor = {Nachaithong, Theeranuch and Kidkhunthod, Pinit and Thongbai, Prasit and\n Maensiri, Santi},\nTitle = {{Surface barrier layer effect in (In plus Nb) co-doped TiO2 ceramics: An\n alternative route to design low dielectric loss}},\nJournal = {{JOURNAL OF THE AMERICAN CERAMIC SOCIETY}},\nYear = {{2017}},\nVolume = {{100}},\nNumber = {{4}},\nPages = {{1452-1459}},\nMonth = {{APR}},\nAbstract = {{Giant dielectric permittivity (epsilon) with low loss tangent (tan) was\n reported in (In+Nb) co-doped TiO2 ceramics. Either of electron-pinned\n defect-dipole or internal barrier layer capacitor model was proposed to\n be the origin of this high dielectric performance. Here, we proposed an\n effectively alternative route for designing low-tan in co-doped TiO2\n ceramics by creating a resistive outer surface layer. A pure rutile-TiO2\n phase with a dense microstructure and homogeneous dispersion of dopants\n was achieved in (In+Nb) co-doped TiO2 ceramics prepared by a simple\n sol-gel method. Two giant dielectric responses were observed in low- and\n high-frequency ranges, corresponding to extremely high epsilon\n approximate to 10(6)-10(7) and large epsilon approximate to 10(4)-10(5),\n respectively. After annealing in air, a low-frequency dielectric\n response disappeared and could be restored by removing the outer surface\n of the annealed sample, indicating the dominant electrode effect in the\n initial sample. Annealing can cause improved dielectric properties with\n a temperature- and frequency-independent epsilon value of approximate to\n 1.9x10(4) and cause a decrease in tan from 0.1 to 0.035. High dielectric\n performance in (In0.5Nb0.5)(x)Ti1-xO2 ceramics can be achieved by\n eliminating the electrode effect and forming a resistive outer surface\n layer.}},\nDOI = {{10.1111/jace.14688}},\nISSN = {{0002-7820}},\nEISSN = {{1551-2916}},\nUnique-ID = {{ISI:000399610800027}},\n}\n\n","author_short":["Nachaithong, T.","Kidkhunthod, P.","Thongbai, P.","Maensiri, S."],"key":"ISI:000399610800027","id":"ISI:000399610800027","bibbaseid":"nachaithong-kidkhunthod-thongbai-maensiri-surfacebarrierlayereffectininplusnbcodopedtio2ceramicsanalternativeroutetodesignlowdielectricloss-2017","role":"author","urls":{},"downloads":0},"bibtype":"article","biburl":"http://nanotec.cnr.it/data/nanotec/nanotec-full.bib","creationDate":"2020-04-21T16:04:30.781Z","downloads":0,"keywords":[],"search_terms":["surface","barrier","layer","effect","plus","doped","tio2","ceramics","alternative","route","design","low","dielectric","loss","nachaithong","kidkhunthod","thongbai","maensiri"],"title":"Surface barrier layer effect in (In plus Nb) co-doped TiO2 ceramics: An alternative route to design low dielectric loss","year":2017,"dataSources":["ZTEbWc6bW5f9DTsjF"]}