Colossal permittivity in (In1/2Nb1/2)(x)Ti1-xO2 ceramics prepared by a glycine nitrate process. Nachaithong, T., Thongbai, P., & Maensiri, S. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 37(2):655-660, FEB, 2017.
doi  abstract   bibtex   
(In + Nb) co-doped TiO2 nanoparticles with very low dopant concentrations were prepared using a glycine nitrate process. A pure rutile-TiO2 phase with a dense microstructure and homogeneous dispersion of dopants was achieved. By doping TiO2 with 1.5% (In + Nb) ions, a very high dielectric permittivity of epsilon' = 42,376 and low loss tangents of tan delta = 0.06 (at room temperature) were achieved. The large conduction activation energy at the grain boundary decreased with decreasing dopant concentration. The colossal permittivity was primarily attributed to the internal barrier layer capacitor (IBLC) effect. The dominant effect of interfacial polarization at the non-Ohmic sample-electrode contact was observed when the dopant concentration was <= 1.0 mol%. Interestingly, the sample-electrode contact and resistive-outer surface layer effects, i.e., surface barrier layer capacitor (SBLC) effect, has also an effect on the colossal dielectric response in (In + Nb) co-doped TiO2 ceramics. (C) 2016 Elsevier Ltd. All rights reserved.
@article{ ISI:000386643900027,
Author = {Nachaithong, Theeranuch and Thongbai, Prasit and Maensiri, Santi},
Title = {{Colossal permittivity in (In1/2Nb1/2)(x)Ti1-xO2 ceramics prepared by a
   glycine nitrate process}},
Journal = {{JOURNAL OF THE EUROPEAN CERAMIC SOCIETY}},
Year = {{2017}},
Volume = {{37}},
Number = {{2}},
Pages = {{655-660}},
Month = {{FEB}},
Abstract = {{(In + Nb) co-doped TiO2 nanoparticles with very low dopant
   concentrations were prepared using a glycine nitrate process. A pure
   rutile-TiO2 phase with a dense microstructure and homogeneous dispersion
   of dopants was achieved. By doping TiO2 with 1.5\% (In + Nb) ions, a
   very high dielectric permittivity of epsilon' = 42,376 and low loss
   tangents of tan delta = 0.06 (at room temperature) were achieved. The
   large conduction activation energy at the grain boundary decreased with
   decreasing dopant concentration. The colossal permittivity was primarily
   attributed to the internal barrier layer capacitor (IBLC) effect. The
   dominant effect of interfacial polarization at the non-Ohmic
   sample-electrode contact was observed when the dopant concentration was
   <= 1.0 mol\%. Interestingly, the sample-electrode contact and
   resistive-outer surface layer effects, i.e., surface barrier layer
   capacitor (SBLC) effect, has also an effect on the colossal dielectric
   response in (In + Nb) co-doped TiO2 ceramics. (C) 2016 Elsevier Ltd. All
   rights reserved.}},
DOI = {{10.1016/j.jeurceramsoc.2016.09.006}},
ISSN = {{0955-2219}},
EISSN = {{1873-619X}},
Unique-ID = {{ISI:000386643900027}},
}
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