InGaN-based multi-quantum-well-structure laser diodes. Nakamura, S., Senoh, M., Nagahama, S. i., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., & Sugimoto, Y. Japanese Journal of Applied Physics, Part 2: Letters, 1996. doi abstract bibtex InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.
@article{nakamura_ingan-based_1996,
title = {{InGaN}-based multi-quantum-well-structure laser diodes},
volume = {35},
issn = {00214922},
doi = {10.1143/jjap.35.l74},
abstract = {InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.},
number = {1 B},
journal = {Japanese Journal of Applied Physics, Part 2: Letters},
author = {Nakamura, Shuji and Senoh, Masayuki and Nagahama, Shin ichi and Iwasa, Naruhito and Yamada, Takao and Matsushita, Toshio and Kiyoku, Hiroyuki and Sugimoto, Yasunobu},
year = {1996},
}
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