Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime. Nakamura, S., Senoh, M., Nagahama, S. I., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., & Kiyoku, H. Applied Physics Letters, 1997. doi abstract bibtex The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24-40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1 ×1020/cm3, respectively. © 1997 American Institute of Physics.
@article{nakamura_room-temperature_1997,
title = {Room-temperature continuous-wave operation of {InGaN} multi-quantum-well-structure laser diodes with a long lifetime},
volume = {70},
issn = {00036951},
doi = {10.1063/1.118300},
abstract = {The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24-40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1 ×1020/cm3, respectively. © 1997 American Institute of Physics.},
number = {7},
journal = {Applied Physics Letters},
author = {Nakamura, Shuji and Senoh, Masayuki and Nagahama, Shin Ichi and Iwasa, Naruhito and Yamada, Takao and Matsushita, Toshio and Sugimoto, Yasunobu and Kiyoku, Hiroyuki},
year = {1997},
}
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{"_id":"cTHjS9xh7Cvjm4KsP","bibbaseid":"nakamura-senoh-nagahama-iwasa-yamada-matsushita-sugimoto-kiyoku-roomtemperaturecontinuouswaveoperationofinganmultiquantumwellstructurelaserdiodeswithalonglifetime-1997","author_short":["Nakamura, S.","Senoh, M.","Nagahama, S. I.","Iwasa, N.","Yamada, T.","Matsushita, T.","Sugimoto, Y.","Kiyoku, H."],"bibdata":{"bibtype":"article","type":"article","title":"Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime","volume":"70","issn":"00036951","doi":"10.1063/1.118300","abstract":"The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24-40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1 ×1020/cm3, respectively. © 1997 American Institute of Physics.","number":"7","journal":"Applied Physics Letters","author":[{"propositions":[],"lastnames":["Nakamura"],"firstnames":["Shuji"],"suffixes":[]},{"propositions":[],"lastnames":["Senoh"],"firstnames":["Masayuki"],"suffixes":[]},{"propositions":[],"lastnames":["Nagahama"],"firstnames":["Shin","Ichi"],"suffixes":[]},{"propositions":[],"lastnames":["Iwasa"],"firstnames":["Naruhito"],"suffixes":[]},{"propositions":[],"lastnames":["Yamada"],"firstnames":["Takao"],"suffixes":[]},{"propositions":[],"lastnames":["Matsushita"],"firstnames":["Toshio"],"suffixes":[]},{"propositions":[],"lastnames":["Sugimoto"],"firstnames":["Yasunobu"],"suffixes":[]},{"propositions":[],"lastnames":["Kiyoku"],"firstnames":["Hiroyuki"],"suffixes":[]}],"year":"1997","bibtex":"@article{nakamura_room-temperature_1997,\n\ttitle = {Room-temperature continuous-wave operation of {InGaN} multi-quantum-well-structure laser diodes with a long lifetime},\n\tvolume = {70},\n\tissn = {00036951},\n\tdoi = {10.1063/1.118300},\n\tabstract = {The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24-40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1 ×1020/cm3, respectively. © 1997 American Institute of Physics.},\n\tnumber = {7},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Nakamura, Shuji and Senoh, Masayuki and Nagahama, Shin Ichi and Iwasa, Naruhito and Yamada, Takao and Matsushita, Toshio and Sugimoto, Yasunobu and Kiyoku, Hiroyuki},\n\tyear = {1997},\n}\n\n","author_short":["Nakamura, S.","Senoh, M.","Nagahama, S. I.","Iwasa, N.","Yamada, T.","Matsushita, T.","Sugimoto, Y.","Kiyoku, H."],"key":"nakamura_room-temperature_1997","id":"nakamura_room-temperature_1997","bibbaseid":"nakamura-senoh-nagahama-iwasa-yamada-matsushita-sugimoto-kiyoku-roomtemperaturecontinuouswaveoperationofinganmultiquantumwellstructurelaserdiodeswithalonglifetime-1997","role":"author","urls":{},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/rwellen","dataSources":["74aQfjv6gMLQcjo4z"],"keywords":[],"search_terms":["room","temperature","continuous","wave","operation","ingan","multi","quantum","well","structure","laser","diodes","long","lifetime","nakamura","senoh","nagahama","iwasa","yamada","matsushita","sugimoto","kiyoku"],"title":"Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime","year":1997}