Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors. Nenashev, A., V., Oelerich, J., O., Dvurechenskii, A., V., Gebhard, F., & Baranovskii, S., D. Physical Review B, 96(3):035204, 2017. ![Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors [pdf]](https://bibbase.org/img/filetypes/pdf.svg "pdf")
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Website abstract bibtex Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\mu(F)/\mu(0)$ in a system of random sites is determined by the localization length $\alpha$ and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for theoretical description of experimental data and for device modeling, where $N^-1/3$ is considered as the decisive length scale for $\mu(F)$. We show that although the limiting value $\mu(F \rightarrow 0)$ is determined by the ratio $N^-1/3/\alpha$, the dependence $\mu(F)/\mu(0)$ is sensitive to the magnitude of $\alpha$ and not to $N^-1/3$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eF\alpha$.
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title = {Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors},
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year = {2017},
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pages = {035204},
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websites = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.035204},
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abstract = {Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\mu(F)/\mu(0)$ in a system of random sites is determined by the localization length $\alpha$ and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for theoretical description of experimental data and for device modeling, where $N^-1/3$ is considered as the decisive length scale for $\mu(F)$. We show that although the limiting value $\mu(F \rightarrow 0)$ is determined by the ratio $N^-1/3/\alpha$, the dependence $\mu(F)/\mu(0)$ is sensitive to the magnitude of $\alpha$ and not to $N^-1/3$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eF\alpha$.},
bibtype = {article},
author = {Nenashev, A. V. and Oelerich, J. O. and Dvurechenskii, A. V. and Gebhard, F. and Baranovskii, S. D.},
journal = {Physical Review B},
number = {3}
}