Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors. Nenashev, A., V., Oelerich, J., O., Dvurechenskii, A., V., Gebhard, F., & Baranovskii, S., D. *Physical Review B*, 96(3):035204, 2017.

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Paper Website abstract bibtex

Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\mu(F)/\mu(0)$ in a system of random sites is determined by the localization length $\alpha$ and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for theoretical description of experimental data and for device modeling, where $N^-1/3$ is considered as the decisive length scale for $\mu(F)$. We show that although the limiting value $\mu(F \rightarrow 0)$ is determined by the ratio $N^-1/3/\alpha$, the dependence $\mu(F)/\mu(0)$ is sensitive to the magnitude of $\alpha$ and not to $N^-1/3$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eF\alpha$.

@article{ title = {Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors}, type = {article}, year = {2017}, identifiers = {[object Object]}, pages = {035204}, volume = {96}, websites = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.035204}, id = {df883676-b1a6-3356-8519-8d991cd05e6d}, created = {2017-07-27T09:36:55.016Z}, file_attached = {true}, profile_id = {f593ffaf-f5ef-31db-ab88-e023f3a82e91}, last_modified = {2018-02-02T10:37:01.616Z}, read = {false}, starred = {false}, authored = {true}, confirmed = {true}, hidden = {false}, citation_key = {Nenashev2017}, folder_uuids = {fdb5e0cd-09c7-45b3-9244-098e0449f800}, private_publication = {false}, abstract = {Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\mu(F)/\mu(0)$ in a system of random sites is determined by the localization length $\alpha$ and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for theoretical description of experimental data and for device modeling, where $N^-1/3$ is considered as the decisive length scale for $\mu(F)$. We show that although the limiting value $\mu(F \rightarrow 0)$ is determined by the ratio $N^-1/3/\alpha$, the dependence $\mu(F)/\mu(0)$ is sensitive to the magnitude of $\alpha$ and not to $N^-1/3$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eF\alpha$.}, bibtype = {article}, author = {Nenashev, A. V. and Oelerich, J. O. and Dvurechenskii, A. V. and Gebhard, F. and Baranovskii, S. D.}, journal = {Physical Review B}, number = {3} }

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{"_id":"JzdNeNJTjv7oWWcSW","bibbaseid":"nenashev-oelerich-dvurechenskii-gebhard-baranovskii-fundamentalcharacteristiclengthscaleforthefielddependenceofhoppingchargetransportindisorderedorganicsemiconductors-2017","downloads":0,"creationDate":"2018-01-19T10:34:08.507Z","title":"Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors","author_short":["Nenashev, A., V.","Oelerich, J., O.","Dvurechenskii, A., V.","Gebhard, F.","Baranovskii, S., D."],"year":2017,"bibtype":"article","biburl":null,"bibdata":{"title":"Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors","type":"article","year":"2017","identifiers":"[object Object]","pages":"035204","volume":"96","websites":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.035204","id":"df883676-b1a6-3356-8519-8d991cd05e6d","created":"2017-07-27T09:36:55.016Z","file_attached":"true","profile_id":"f593ffaf-f5ef-31db-ab88-e023f3a82e91","last_modified":"2018-02-02T10:37:01.616Z","read":false,"starred":false,"authored":"true","confirmed":"true","hidden":false,"citation_key":"Nenashev2017","folder_uuids":"fdb5e0cd-09c7-45b3-9244-098e0449f800","private_publication":false,"abstract":"Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\\mu(F)/\\mu(0)$ in a system of random sites is determined by the localization length $\\alpha$ and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for theoretical description of experimental data and for device modeling, where $N^-1/3$ is considered as the decisive length scale for $\\mu(F)$. We show that although the limiting value $\\mu(F \\rightarrow 0)$ is determined by the ratio $N^-1/3/\\alpha$, the dependence $\\mu(F)/\\mu(0)$ is sensitive to the magnitude of $\\alpha$ and not to $N^-1/3$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eF\\alpha$.","bibtype":"article","author":"Nenashev, A. V. and Oelerich, J. O. and Dvurechenskii, A. V. and Gebhard, F. and Baranovskii, S. D.","journal":"Physical Review B","number":"3","bibtex":"@article{\n title = {Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors},\n type = {article},\n year = {2017},\n identifiers = {[object Object]},\n pages = {035204},\n volume = {96},\n websites = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.035204},\n id = {df883676-b1a6-3356-8519-8d991cd05e6d},\n created = {2017-07-27T09:36:55.016Z},\n file_attached = {true},\n profile_id = {f593ffaf-f5ef-31db-ab88-e023f3a82e91},\n last_modified = {2018-02-02T10:37:01.616Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {true},\n hidden = {false},\n citation_key = {Nenashev2017},\n folder_uuids = {fdb5e0cd-09c7-45b3-9244-098e0449f800},\n private_publication = {false},\n abstract = {Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\\mu(F)/\\mu(0)$ in a system of random sites is determined by the localization length $\\alpha$ and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for theoretical description of experimental data and for device modeling, where $N^-1/3$ is considered as the decisive length scale for $\\mu(F)$. We show that although the limiting value $\\mu(F \\rightarrow 0)$ is determined by the ratio $N^-1/3/\\alpha$, the dependence $\\mu(F)/\\mu(0)$ is sensitive to the magnitude of $\\alpha$ and not to $N^-1/3$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eF\\alpha$.},\n bibtype = {article},\n author = {Nenashev, A. V. and Oelerich, J. O. and Dvurechenskii, A. V. and Gebhard, F. and Baranovskii, S. D.},\n journal = {Physical Review B},\n number = {3}\n}","author_short":["Nenashev, A., V.","Oelerich, J., O.","Dvurechenskii, A., V.","Gebhard, F.","Baranovskii, S., D."],"urls":{"Paper":"https://bibbase.org/service/mendeley/f593ffaf-f5ef-31db-ab88-e023f3a82e91/file/74cd2b82-de7a-c963-4620-53ad462de413/2017-Fundamental_characteristic_length_scale_for_the_field_dependence_of_hopping_charge_transport_in_disordered_organic_.pdf.pdf","Website":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.035204"},"bibbaseid":"nenashev-oelerich-dvurechenskii-gebhard-baranovskii-fundamentalcharacteristiclengthscaleforthefielddependenceofhoppingchargetransportindisorderedorganicsemiconductors-2017","role":"author","downloads":0},"search_terms":["fundamental","characteristic","length","scale","field","dependence","hopping","charge","transport","disordered","organic","semiconductors","nenashev","oelerich","dvurechenskii","gebhard","baranovskii"],"keywords":[],"authorIDs":[]}