A 1.5–45-GHz High-Power 2-D Distributed Voltage-Controlled Attenuator. Nguyen, D., P., Pham, B., L., & Pham, A. IEEE Transactions on Microwave Theory and Techniques, 65(11):4208-4217, 11, 2017.
abstract   bibtex   
We present the development of an ultra-wideband and 1-W voltage-controlled attenuator (VCA) using a 0.15-μm enhancement mode gallium arsenide pseudomorphic highelectron mobility transistor technology. For the first time, a 2-D stacked field-effect transistor configuration is employed in a distributed VCA to simultaneously achieve wide bandwidth, high power, high dynamic range, and low insertion loss. The systematic design methodology is proposed, and a VCA prototype is fabricated and measured for verification. The monolithic microwave integrated circuit (MMIC) VCA exhibits a measured insertion loss of 1.9-5.5 dB from 1.5-45 GHz. The measured highest input 1-dB power compression point (P1dB) is 30 dBm with a dynamic range of 26 dB. To the best of the authors' knowledge, this paper reports the highest bandwidth and P1dB of a single MMIC VCA while still maintaining excellent performance regarding dynamic range, insertion loss, and chip size.
@article{
 title = {A 1.5–45-GHz High-Power 2-D Distributed Voltage-Controlled Attenuator},
 type = {article},
 year = {2017},
 identifiers = {[object Object]},
 keywords = {attenuators;gallium arsenide;HEMT integrated circu},
 pages = {4208-4217},
 volume = {65},
 month = {11},
 id = {b75bed3e-11e0-38dc-985a-0da9a62cd850},
 created = {2020-04-13T20:08:32.109Z},
 file_attached = {false},
 profile_id = {ac5c8e47-7448-34f1-9dda-fe44957f5950},
 group_id = {ebb0c10c-30f1-31a4-b724-9e94c775c126},
 last_modified = {2020-04-13T20:08:32.109Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 citation_key = {7938776},
 source_type = {article},
 private_publication = {false},
 abstract = {We present the development of an ultra-wideband and 1-W voltage-controlled attenuator (VCA) using a 0.15-μm enhancement mode gallium arsenide pseudomorphic highelectron mobility transistor technology. For the first time, a 2-D stacked field-effect transistor configuration is employed in a distributed VCA to simultaneously achieve wide bandwidth, high power, high dynamic range, and low insertion loss. The systematic design methodology is proposed, and a VCA prototype is fabricated and measured for verification. The monolithic microwave integrated circuit (MMIC) VCA exhibits a measured insertion loss of 1.9-5.5 dB from 1.5-45 GHz. The measured highest input 1-dB power compression point (P1dB) is 30 dBm with a dynamic range of 26 dB. To the best of the authors' knowledge, this paper reports the highest bandwidth and P1dB of a single MMIC VCA while still maintaining excellent performance regarding dynamic range, insertion loss, and chip size.},
 bibtype = {article},
 author = {Nguyen, D P and Pham, B L and Pham, A},
 journal = {IEEE Transactions on Microwave Theory and Techniques},
 number = {11}
}
Downloads: 0