Model-independent determination of 2D strain distribution in ion-implanted silicon crystals from x-ray diffraction data. Nikulin, A. Y., Stevenson, A. W., Hashizume, H., Cookson, D., Hobler, G., & Wilkins, S. W. Semiconductor Science and Technology, 12(3):350, March, 1997. ![Model-independent determination of 2D strain distribution in ion-implanted silicon crystals from x-ray diffraction data [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Two-dimensional strain profiles for silicon crystals implanted with 100 keV boron ions both before and after annealing (1000 for 15 min) have been determined from x-ray diffractometry data. Deformation maps show the variations of the lattice distortion perpendicular to the surface as a function of both the lateral position and depth in the crystal. The 2D maps suggest that the radiation point defect profile can vary significantly due to localized strain at the edges of the oxide-mask windows and to thermal annealing.
@article{nikulin_model-independent_1997,
title = {Model-independent determination of 2D strain distribution in ion-implanted silicon crystals from x-ray diffraction data},
volume = {12},
issn = {0268-1242},
url = {http://iopscience.iop.org/0268-1242/12/3/002},
doi = {10.1088/0268-1242/12/3/002},
abstract = {Two-dimensional strain profiles for silicon crystals implanted with 100 keV boron ions both before and after annealing (1000 for 15 min) have been determined from x-ray diffractometry data. Deformation maps show the variations of the lattice distortion perpendicular to the surface as a function of both the lateral position and depth in the crystal. The 2D maps suggest that the radiation point defect profile can vary significantly due to localized strain at the edges of the oxide-mask windows and to thermal annealing.},
language = {en},
number = {3},
urldate = {2013-06-22TZ},
journal = {Semiconductor Science and Technology},
author = {Nikulin, A. Yu and Stevenson, A. W. and Hashizume, H. and Cookson, D. and Hobler, G. and Wilkins, S. W.},
month = mar,
year = {1997},
pages = {350}
}
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