Ballistic rectification of vortex domain wall chirality at nanowire corners. Omari, K., Bradley, R. C., Broomhall, T. J., Hodges, M. P. P., Rosamond, M. C., Linfield, E. H., Im, M., Fischer, P., & Hayward, T. J. Applied Physics Letters, 107(22):222403, November, 2015.
Paper doi abstract bibtex The interactions of vortexdomain walls with corners in planar magnetic nanowires are probed using magnetic soft X-ray transmission microscopy. We show that when the domain walls are propagated into sharp corners using applied magnetic fields above a critical value, their chiralities are rectified to either clockwise or anticlockwise circulation depending on whether the corners turn left or right. Single-shot focused magneto-optic Kerr effect measurements are then used to demonstrate how, when combined with modes of domain propagation that conserve vortexchirality, this allows us to dramatically reduce the stochasticity of domain pinning at artificial defect sites. Our results provide a tool for controlling domain wallchirality and pinning behavior both in further experimental studies and in future domain wall-based memory, logic and sensor technologies.
@article{omari_ballistic_2015,
title = {Ballistic rectification of vortex domain wall chirality at nanowire corners},
volume = {107},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/107/22/10.1063/1.4936565},
doi = {10.1063/1.4936565},
abstract = {The interactions of vortexdomain walls with corners in planar magnetic nanowires are probed using magnetic soft X-ray transmission microscopy. We show that when the domain walls are propagated into sharp corners using applied magnetic fields above a critical value, their chiralities are rectified to either clockwise or anticlockwise circulation depending on whether the corners turn left or right. Single-shot focused magneto-optic Kerr effect measurements are then used to demonstrate how, when combined with modes of domain propagation that conserve vortexchirality, this allows us to dramatically reduce the stochasticity of domain pinning at artificial defect sites. Our results provide a tool for controlling domain wallchirality and pinning behavior both in further experimental studies and in future domain wall-based memory, logic and sensor technologies.},
number = {22},
urldate = {2016-11-24},
journal = {Applied Physics Letters},
author = {Omari, K. and Bradley, R. C. and Broomhall, T. J. and Hodges, M. P. P. and Rosamond, M. C. and Linfield, E. H. and Im, M.-Y. and Fischer, P. and Hayward, T. J.},
month = nov,
year = {2015},
keywords = {Chiral symmetries, Domain walls, Rectification, Rotating flows, nanowires},
pages = {222403},
}
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