@article{ ISI:000334740100024,
Author = {Onlaor, K. and Thiwawong, T. and Tunhoo, B.},
Title = {{Electrical switching and conduction mechanisms of nonvolatile
   write-once-read-many-times memory devices with ZnO nanoparticles
   embedded in polyvinylpyrrolidone}},
Journal = {{ORGANIC ELECTRONICS}},
Year = {{2014}},
Volume = {{15}},
Number = {{6}},
Pages = {{1254-1262}},
Month = {{JUN}},
Abstract = {{We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on
   the electrical bistable behavior of nonvolatile
   write-once-read-many-times (WORM) memory devices based on an indium- tin
   oxide/polyvinylpyrrolidone (PVP): ZnO NPs/aluminum (ITO/PVP: ZnO/Al)
   structure. The maximum ON/OFF current ratio of the nonvolatile WORM
   memory devices was approximately 3 Chi 10(3) and the devices remained in
   the ON state even after the applied voltage was turned off. In addition,
   reliability studies for response time and once write/continuous read
   operations of the optimal ZnO NPs concentration are presented. The
   response times of both rise-time and fall-time were about 3 and 6 mu s
   respectively. The conduction mechanisms of all voltage regions of the
   device were analyzed by theoretical models and electron trapping in the
   ZnO NPs of the electron tunneling among a PVP matrix was discussed. (C)
   2014 Elsevier B.V. All rights reserved.}},
DOI = {{10.1016/j.orgel.2014.03.024}},
ISSN = {{1566-1199}},
EISSN = {{1878-5530}},
Unique-ID = {{ISI:000334740100024}},
}

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