High-power AlGaN/GaN HEMTs for Ka-band applications. Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S. P., Speck, J. S., & Mishra, U. K. IEEE Electron Device Letters, 26(11):781–783, November, 2005. doi abstract bibtex We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at VDS = 30 V. Under similar bias conditions, more than 8.6 W/mm, with 32% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed. © 2005 IEEE.
@article{palacios_high-power_2005,
title = {High-power {AlGaN}/{GaN} {HEMTs} for {Ka}-band applications},
volume = {26},
issn = {07413106},
doi = {10.1109/LED.2005.857701},
abstract = {We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34\% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at VDS = 30 V. Under similar bias conditions, more than 8.6 W/mm, with 32\% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed. © 2005 IEEE.},
number = {11},
journal = {IEEE Electron Device Letters},
author = {Palacios, T. and Chakraborty, A. and Rajan, S. and Poblenz, C. and Keller, S. and DenBaars, S. P. and Speck, J. S. and Mishra, U. K.},
month = nov,
year = {2005},
keywords = {GaN, HEMTs, High-frequency performance, MBE, MOCVD, Millimeter-wave (mm-wave) devices, Output power},
pages = {781--783},
}
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