CuInSe 2 phase formation during Cu 2 SeÕIn 2 Se 3 interdiffusion reaction. Park, J., S.; Dong, Z.; Kim, S.; and Perepezko, J., H. Technical Report 2000.
CuInSe 2 phase formation during Cu 2 SeÕIn 2 Se 3 interdiffusion reaction [pdf]Paper  CuInSe 2 phase formation during Cu 2 SeÕIn 2 Se 3 interdiffusion reaction [link]Website  abstract   bibtex   
Diffusion couples based upon Cu 2 Se/In 2 Se 3 pairings have been examined in order to identify the kinetics of intermediate phase development and the associated phase equilibria. For the diffusion couples annealed at 550 °C for 1.5 h, all phases included in the Cu 2 Se-In 2 Se 3 pseudobinary phase diagram section developed including the CuInSe 2 CIS phase. Also, the In 6 Se 7 phase formed for annealing times in excess of 1.5 h at 550 °C, indicating a modification of the diffusion pathway outside the pseudobinary phase diagram section. The growth of the CIS phase formed by reactive diffusion follows parabolic kinetics (x 2 kt) with the k value of 3.310 8 cm 2 /s. CIS phase precipitates with a dendritic morphology are also produced within the Cu 2 Se side of the diffusion couple far from the initial interface, indicating that In is the fast component during interdiffusion. Based upon electron diffraction analysis and simulation of electron diffraction patterns, the dendritic shaped CIS precipitate structure was uniquely determined to be the metastable zinc blende type rather than the stable chalcopyrite-type structure. The structure and orientation relationship between the metastable CIS phase and the Cu 2 Se matrix satisfy the conditions established for the development of a solid state dendritic morphology.
@techreport{
 title = {CuInSe 2 phase formation during Cu 2 SeÕIn 2 Se 3 interdiffusion reaction},
 type = {techreport},
 year = {2000},
 source = {Journal of Applied Physics},
 keywords = {2000,Cu,In,Se,interdiffusion,journal of applied physics,phase formation,se},
 pages = {3683-3690},
 volume = {87},
 issue = {8},
 websites = {http://ojps.aip.org/japo/japcr.jsp},
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 abstract = {Diffusion couples based upon Cu 2 Se/In 2 Se 3 pairings have been examined in order to identify the kinetics of intermediate phase development and the associated phase equilibria. For the diffusion couples annealed at 550 °C for 1.5 h, all phases included in the Cu 2 Se-In 2 Se 3 pseudobinary phase diagram section developed including the CuInSe 2 CIS phase. Also, the In 6 Se 7 phase formed for annealing times in excess of 1.5 h at 550 °C, indicating a modification of the diffusion pathway outside the pseudobinary phase diagram section. The growth of the CIS phase formed by reactive diffusion follows parabolic kinetics (x 2 kt) with the k value of 3.310 8 cm 2 /s. CIS phase precipitates with a dendritic morphology are also produced within the Cu 2 Se side of the diffusion couple far from the initial interface, indicating that In is the fast component during interdiffusion. Based upon electron diffraction analysis and simulation of electron diffraction patterns, the dendritic shaped CIS precipitate structure was uniquely determined to be the metastable zinc blende type rather than the stable chalcopyrite-type structure. The structure and orientation relationship between the metastable CIS phase and the Cu 2 Se matrix satisfy the conditions established for the development of a solid state dendritic morphology.},
 bibtype = {techreport},
 author = {Park, J S and Dong, Z and Kim, Sungtae and Perepezko, J H}
}
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