@techreport{
 title = {Kinetic control of silicon carbide/metal reactions},
 type = {techreport},
 year = {1999},
 source = {Materials Science and Engineering A},
 identifiers = {[object Object]},
 keywords = {Diffusion,Interfacial reactions,Kinetics,Reaction pathway,SiC/metal},
 pages = {279-286},
 volume = {259},
 issue = {2},
 id = {f6366d06-3265-3ad4-8afd-6514563b5cfc},
 created = {2019-01-07T22:18:08.800Z},
 file_attached = {true},
 profile_id = {70644822-a92d-388e-a930-3d28afc76b1e},
 group_id = {f7d35d58-7823-3e09-9e83-2d24928a3f0e},
 last_modified = {2019-01-07T22:22:40.739Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 private_publication = {false},
 abstract = {The kinetic features governing SiC/metal reactions have been investigated to identify the operating mechanisms and diffusion characteristics. With respect to the contact metal components, the reaction characteristics were identified by two separate modes-formation of silicides and free carbon (Mode I), or formation of carbides and silicides (Mode II). The analysis was confirmed by comparing SiC/Ni and SiC/Cr reactions. The diffusion pathways for both reactions were examined in terms of a chemical potential framework. The application of the analysis has been extended to in-situ interface reactions of SiC/Cu/Ni and SiC/Cr/Ni. New reaction modes representing SiC/metal reactions are considered as well as a strategy to control the reaction pathway.},
 bibtype = {techreport},
 author = {Park, J. S. and Landry, K. and Perepezko, J. H.}
}

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