Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy. Park, Y. S., Park, C. J., Park, C. M., Na, J. H., Oh, J. S., Yoon, I. T., Cho, H. Y., Kang, T. W., & Oh, J. Applied Physics Letters, 86(15):152109, April, 2005. ![Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi bibtex @article{park_deep_2005,
title = {Deep level defects in {Si}-doped {AlxGa1}−{xN} films grown by molecular-beam epitaxy},
volume = {86},
issn = {0003-6951, 1077-3118},
url = {https://pubs.aip.org/aip/apl/article/899466},
doi = {10.1063/1.1887817},
language = {en},
number = {15},
urldate = {2023-05-18},
journal = {Applied Physics Letters},
author = {Park, Y. S. and Park, C. J. and Park, C. M. and Na, J. H. and Oh, J. S. and Yoon, I. T. and Cho, H. Y. and Kang, T. W. and Oh, Jae-Eung},
month = apr,
year = {2005},
pages = {152109},
}
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