Transient Terahertz Conductivity of GaAs Nanowires. Parkinson, P., Lloyd-Hughes, J., Gao, Q., Tan, H., H., Jagadish, C., Johnston, M., B., & Herz, L., M. Nano Letters, 7(7):2162, American Chemical Society, 2007.
Transient Terahertz Conductivity of GaAs Nanowires [link]Website  abstract   bibtex   
The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature.
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 title = {Transient Terahertz Conductivity of GaAs Nanowires},
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 year = {2007},
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 pages = {2162},
 volume = {7},
 websites = {http://pubs.acs.org/doi/abs/10.1021/nl071162x},
 publisher = {American Chemical Society},
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 abstract = {The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature.},
 bibtype = {article},
 author = {Parkinson, Patrick and Lloyd-Hughes, James and Gao, Qiang and Tan, H Hoe and Jagadish, Chennupati and Johnston, Michael B and Herz, Laura M},
 journal = {Nano Letters},
 number = {7}
}

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