Recent advances in spin-polarized scanning tunneling microscopy. Pietzsch, O., Kubetzka, A., Bode, M., & Wiesendanger, R. Applied Physics A-Materials Science & Processing, 78(6):781–785, March, 2004.
abstract   bibtex   
Considerable progress in the field of spin-polarized scanning tunneling microscopy (SP-STM) has been achieved recently by gaining a high degree of control with regard to properties of the tunneling tip. It is found that by choosing the appropriate material for the magnetic thin film coating of the tip sensitivity to either the sample's in-plane or perpendicular magnetization component can be achieved. Using SP-STM in external magnetic fields, domains and domain walls of two atomic layers thick Fe on a W(110) substrate are studied. A residual domain of enhanced stability against remagnetization is observed. Furthermore, a new imaging mechanism is identified which allows the use of even non-magnetic tungsten tips to observe contrast between magnetic domains and domain walls. The effect exploited is a modification of the electronic band structure which is induced by spin-orbit coupling.
@article{pietzsch_recent_2004,
	title = {Recent advances in spin-polarized scanning tunneling microscopy},
	volume = {78},
	abstract = {Considerable progress in the field of spin-polarized scanning tunneling microscopy (SP-STM) has been achieved recently by gaining a high degree of control with regard to properties of the tunneling tip. It is found that by choosing the appropriate material for the magnetic thin film coating of the tip sensitivity to either the sample's in-plane or perpendicular magnetization component can be achieved. Using SP-STM in external magnetic fields, domains and domain walls of two atomic layers thick Fe on a W(110) substrate are studied. A residual domain of enhanced stability against remagnetization is observed. Furthermore, a new imaging mechanism is identified which allows the use of even non-magnetic tungsten tips to observe contrast between magnetic domains and domain walls. The effect exploited is a modification of the electronic band structure which is induced by spin-orbit coupling.},
	number = {6},
	journal = {Applied Physics A-Materials Science \& Processing},
	author = {Pietzsch, O. and Kubetzka, A. and Bode, M. and Wiesendanger, R.},
	month = mar,
	year = {2004},
	pages = {781--785},
}

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