Low-Voltage Low-Power Curvature-Corrected Voltage Reference Circuit Using DTMOSTs. Popa, C. In Azémard, N. & Svensson, L., editors, Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation, of Lecture Notes in Computer Science, pages 117–124. Springer Berlin Heidelberg, September, 2007. ![Low-Voltage Low-Power Curvature-Corrected Voltage Reference Circuit Using DTMOSTs [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex A low-voltage low power voltage reference realized in 0.35μm CMOS technology will be presented. In order to achieve two important goals of low-power high performances bandgap references realized in the newer CMOS technologies – a low supply voltage and a small value of the temperature coefficient, a modified structure using dynamic MOS transistors (equivalent with a virtually lowering of the material bandgap) and a square-root curvature-correction will be implemented. The accuracy of the output voltage will be increased using an Offset Voltage Follower Block as PTAT voltage generator, with the advantage that matched resistors are replaced by matched transistors. The low-power operation of the circuit will be achieved by using exclusively subthreshold-operated MOS devices. Experimental results confirm the theoretical estimations, showing a minimum supply voltage of 2.5V and a temperature coefficient of about 9.4 ppm /K for an extended temperature range (173K \textless T \textless 423K).
@incollection{popa_low-voltage_2007,
series = {Lecture {Notes} in {Computer} {Science}},
title = {Low-{Voltage} {Low}-{Power} {Curvature}-{Corrected} {Voltage} {Reference} {Circuit} {Using} {DTMOSTs}},
copyright = {©2007 Springer-Verlag Berlin Heidelberg},
isbn = {978-3-540-74441-2 978-3-540-74442-9},
url = {http://link.springer.com/chapter/10.1007/978-3-540-74442-9_12},
abstract = {A low-voltage low power voltage reference realized in 0.35μm CMOS technology will be presented. In order to achieve two important goals of low-power high performances bandgap references realized in the newer CMOS technologies – a low supply voltage and a small value of the temperature coefficient, a modified structure using dynamic MOS transistors (equivalent with a virtually lowering of the material bandgap) and a square-root curvature-correction will be implemented. The accuracy of the output voltage will be increased using an Offset Voltage Follower Block as PTAT voltage generator, with the advantage that matched resistors are replaced by matched transistors. The low-power operation of the circuit will be achieved by using exclusively subthreshold-operated MOS devices. Experimental results confirm the theoretical estimations, showing a minimum supply voltage of 2.5V and a temperature coefficient of about 9.4 ppm /K for an extended temperature range (173K {\textless} T {\textless} 423K).},
language = {en},
number = {4644},
urldate = {2016-04-22TZ},
booktitle = {Integrated {Circuit} and {System} {Design}. {Power} and {Timing} {Modeling}, {Optimization} and {Simulation}},
publisher = {Springer Berlin Heidelberg},
author = {Popa, Cosmin},
editor = {Azémard, Nadine and Svensson, Lars},
month = sep,
year = {2007},
doi = {10.1007/978-3-540-74442-9_12},
pages = {117--124}
}
Downloads: 0
{"_id":"Qb685ttsJAwLm6zkC","bibbaseid":"popa-lowvoltagelowpowercurvaturecorrectedvoltagereferencecircuitusingdtmosts-2007","authorIDs":[],"author_short":["Popa, C."],"bibdata":{"bibtype":"incollection","type":"incollection","series":"Lecture Notes in Computer Science","title":"Low-Voltage Low-Power Curvature-Corrected Voltage Reference Circuit Using DTMOSTs","copyright":"©2007 Springer-Verlag Berlin Heidelberg","isbn":"978-3-540-74441-2 978-3-540-74442-9","url":"http://link.springer.com/chapter/10.1007/978-3-540-74442-9_12","abstract":"A low-voltage low power voltage reference realized in 0.35μm CMOS technology will be presented. In order to achieve two important goals of low-power high performances bandgap references realized in the newer CMOS technologies – a low supply voltage and a small value of the temperature coefficient, a modified structure using dynamic MOS transistors (equivalent with a virtually lowering of the material bandgap) and a square-root curvature-correction will be implemented. The accuracy of the output voltage will be increased using an Offset Voltage Follower Block as PTAT voltage generator, with the advantage that matched resistors are replaced by matched transistors. The low-power operation of the circuit will be achieved by using exclusively subthreshold-operated MOS devices. Experimental results confirm the theoretical estimations, showing a minimum supply voltage of 2.5V and a temperature coefficient of about 9.4 ppm /K for an extended temperature range (173K \\textless T \\textless 423K).","language":"en","number":"4644","urldate":"2016-04-22TZ","booktitle":"Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation","publisher":"Springer Berlin Heidelberg","author":[{"propositions":[],"lastnames":["Popa"],"firstnames":["Cosmin"],"suffixes":[]}],"editor":[{"propositions":[],"lastnames":["Azémard"],"firstnames":["Nadine"],"suffixes":[]},{"propositions":[],"lastnames":["Svensson"],"firstnames":["Lars"],"suffixes":[]}],"month":"September","year":"2007","doi":"10.1007/978-3-540-74442-9_12","pages":"117–124","bibtex":"@incollection{popa_low-voltage_2007,\n\tseries = {Lecture {Notes} in {Computer} {Science}},\n\ttitle = {Low-{Voltage} {Low}-{Power} {Curvature}-{Corrected} {Voltage} {Reference} {Circuit} {Using} {DTMOSTs}},\n\tcopyright = {©2007 Springer-Verlag Berlin Heidelberg},\n\tisbn = {978-3-540-74441-2 978-3-540-74442-9},\n\turl = {http://link.springer.com/chapter/10.1007/978-3-540-74442-9_12},\n\tabstract = {A low-voltage low power voltage reference realized in 0.35μm CMOS technology will be presented. In order to achieve two important goals of low-power high performances bandgap references realized in the newer CMOS technologies – a low supply voltage and a small value of the temperature coefficient, a modified structure using dynamic MOS transistors (equivalent with a virtually lowering of the material bandgap) and a square-root curvature-correction will be implemented. The accuracy of the output voltage will be increased using an Offset Voltage Follower Block as PTAT voltage generator, with the advantage that matched resistors are replaced by matched transistors. The low-power operation of the circuit will be achieved by using exclusively subthreshold-operated MOS devices. Experimental results confirm the theoretical estimations, showing a minimum supply voltage of 2.5V and a temperature coefficient of about 9.4 ppm /K for an extended temperature range (173K {\\textless} T {\\textless} 423K).},\n\tlanguage = {en},\n\tnumber = {4644},\n\turldate = {2016-04-22TZ},\n\tbooktitle = {Integrated {Circuit} and {System} {Design}. {Power} and {Timing} {Modeling}, {Optimization} and {Simulation}},\n\tpublisher = {Springer Berlin Heidelberg},\n\tauthor = {Popa, Cosmin},\n\teditor = {Azémard, Nadine and Svensson, Lars},\n\tmonth = sep,\n\tyear = {2007},\n\tdoi = {10.1007/978-3-540-74442-9_12},\n\tpages = {117--124}\n}\n\n","author_short":["Popa, C."],"editor_short":["Azémard, N.","Svensson, L."],"key":"popa_low-voltage_2007","id":"popa_low-voltage_2007","bibbaseid":"popa-lowvoltagelowpowercurvaturecorrectedvoltagereferencecircuitusingdtmosts-2007","role":"author","urls":{"Paper":"http://link.springer.com/chapter/10.1007/978-3-540-74442-9_12"},"downloads":0},"bibtype":"incollection","biburl":"https://bibbase.org/zotero/ky25","creationDate":"2019-05-11T17:47:04.641Z","downloads":0,"keywords":[],"search_terms":["low","voltage","low","power","curvature","corrected","voltage","reference","circuit","using","dtmosts","popa"],"title":"Low-Voltage Low-Power Curvature-Corrected Voltage Reference Circuit Using DTMOSTs","year":2007,"dataSources":["XxiQtwZYfozhQmvGR"]}