Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI Wafers. Prasad, M., Sahula, V., & Khanna, V. K. IEEE Transactions on Semiconductor Manufacturing, 26(2):233-241, May, 2013. ![Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI Wafers [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex This paper reports a simpler technique for fabricating an microelectromechanical system acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 ?m, which is covered with 0.2-?m-thick PECVD SiO2, is sandwiched between two aluminum electrodes on a 25- ?m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120-160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 ?V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.
@Article{prasad2013tsem,
author = {Mahanth Prasad and Vineet Sahula and Vinod Kumar Khanna},
title = {Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI Wafers},
journal = {IEEE Transactions on Semiconductor Manufacturing},
year = {2013},
volume = {26},
number = {2},
pages = {233-241},
month = {May},
issn = {0894-6507},
doi = {10.1109/TSM.2013.2238956},
url = {http://ieeexplore.ieee.org/document/6410046/},
abstract = {This paper reports a simpler technique for fabricating an microelectromechanical system acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 ?m, which is covered with 0.2-?m-thick PECVD SiO2, is sandwiched between two aluminum electrodes on a 25- ?m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120-160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 ?V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.},
keywords = {aluminium;chemical vapour deposition;micromechanical devices;piezoelectric thin films;silicon-on-insulator;zinc compounds;ANSYS;Al metallization;MEMS acoustic sensor;PECVD SiO2;SOI wafer;Si;Si-diaphragm;SiO2;ZnO;acoustic pressure;aluminum electrode;c-axis-oriented ZnO film;capacitor electrode;frequency 30 Hz to 8000 Hz;glass particle;microelectromechanical system;microtunnel blockage;piezoelectric thin film;piezoelectric zinc oxide;silicon particle;silicon-on-insulator wafer;size 0.2 micron;size 2.4 micron;size 25 micron;sound pressure level;stress distribution;Acoustic sensors;Cavity resonators;Etching;Fabrication;Sensitivity;Silicon;Zinc oxide;Diaphragm;silicon-on-insulator (SOI) substrate;sound pressure level (SPL);thin film;zinc oxide (ZnO) film},
}
Downloads: 0
{"_id":"WGhBcW9xFTqjTqe8n","bibbaseid":"prasad-sahula-khanna-designandfabricationofsidiaphragmznopiezoelectricfilmbasedmemsacousticsensorusingsoiwafers-2013","author_short":["Prasad, M.","Sahula, V.","Khanna, V. K."],"bibdata":{"bibtype":"article","type":"article","author":[{"firstnames":["Mahanth"],"propositions":[],"lastnames":["Prasad"],"suffixes":[]},{"firstnames":["Vineet"],"propositions":[],"lastnames":["Sahula"],"suffixes":[]},{"firstnames":["Vinod","Kumar"],"propositions":[],"lastnames":["Khanna"],"suffixes":[]}],"title":"Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI Wafers","journal":"IEEE Transactions on Semiconductor Manufacturing","year":"2013","volume":"26","number":"2","pages":"233-241","month":"May","issn":"0894-6507","doi":"10.1109/TSM.2013.2238956","url":"http://ieeexplore.ieee.org/document/6410046/","abstract":"This paper reports a simpler technique for fabricating an microelectromechanical system acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 ?m, which is covered with 0.2-?m-thick PECVD SiO2, is sandwiched between two aluminum electrodes on a 25- ?m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120-160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 ?V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.","keywords":"aluminium;chemical vapour deposition;micromechanical devices;piezoelectric thin films;silicon-on-insulator;zinc compounds;ANSYS;Al metallization;MEMS acoustic sensor;PECVD SiO2;SOI wafer;Si;Si-diaphragm;SiO2;ZnO;acoustic pressure;aluminum electrode;c-axis-oriented ZnO film;capacitor electrode;frequency 30 Hz to 8000 Hz;glass particle;microelectromechanical system;microtunnel blockage;piezoelectric thin film;piezoelectric zinc oxide;silicon particle;silicon-on-insulator wafer;size 0.2 micron;size 2.4 micron;size 25 micron;sound pressure level;stress distribution;Acoustic sensors;Cavity resonators;Etching;Fabrication;Sensitivity;Silicon;Zinc oxide;Diaphragm;silicon-on-insulator (SOI) substrate;sound pressure level (SPL);thin film;zinc oxide (ZnO) film","bibtex":"@Article{prasad2013tsem,\r\n author = {Mahanth Prasad and Vineet Sahula and Vinod Kumar Khanna},\r\n title = {Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI Wafers},\r\n journal = {IEEE Transactions on Semiconductor Manufacturing},\r\n year = {2013},\r\n volume = {26},\r\n number = {2},\r\n pages = {233-241},\r\n month = {May},\r\n issn = {0894-6507},\r\n doi = {10.1109/TSM.2013.2238956},\r\n url = {http://ieeexplore.ieee.org/document/6410046/},\r\n abstract = {This paper reports a simpler technique for fabricating an microelectromechanical system acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 ?m, which is covered with 0.2-?m-thick PECVD SiO2, is sandwiched between two aluminum electrodes on a 25- ?m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120-160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 ?V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.},\r\n keywords = {aluminium;chemical vapour deposition;micromechanical devices;piezoelectric thin films;silicon-on-insulator;zinc compounds;ANSYS;Al metallization;MEMS acoustic sensor;PECVD SiO2;SOI wafer;Si;Si-diaphragm;SiO2;ZnO;acoustic pressure;aluminum electrode;c-axis-oriented ZnO film;capacitor electrode;frequency 30 Hz to 8000 Hz;glass particle;microelectromechanical system;microtunnel blockage;piezoelectric thin film;piezoelectric zinc oxide;silicon particle;silicon-on-insulator wafer;size 0.2 micron;size 2.4 micron;size 25 micron;sound pressure level;stress distribution;Acoustic sensors;Cavity resonators;Etching;Fabrication;Sensitivity;Silicon;Zinc oxide;Diaphragm;silicon-on-insulator (SOI) substrate;sound pressure level (SPL);thin film;zinc oxide (ZnO) film},\r\n}\r\n\r\n","author_short":["Prasad, M.","Sahula, V.","Khanna, V. K."],"key":"prasad2013tsem","id":"prasad2013tsem","bibbaseid":"prasad-sahula-khanna-designandfabricationofsidiaphragmznopiezoelectricfilmbasedmemsacousticsensorusingsoiwafers-2013","role":"author","urls":{"Paper":"http://ieeexplore.ieee.org/document/6410046/"},"keyword":["aluminium;chemical vapour deposition;micromechanical devices;piezoelectric thin films;silicon-on-insulator;zinc compounds;ANSYS;Al metallization;MEMS acoustic sensor;PECVD SiO2;SOI wafer;Si;Si-diaphragm;SiO2;ZnO;acoustic pressure;aluminum electrode;c-axis-oriented ZnO film;capacitor electrode;frequency 30 Hz to 8000 Hz;glass particle;microelectromechanical system;microtunnel blockage;piezoelectric thin film;piezoelectric zinc oxide;silicon particle;silicon-on-insulator wafer;size 0.2 micron;size 2.4 micron;size 25 micron;sound pressure level;stress distribution;Acoustic sensors;Cavity resonators;Etching;Fabrication;Sensitivity;Silicon;Zinc oxide;Diaphragm;silicon-on-insulator (SOI) substrate;sound pressure level (SPL);thin film;zinc oxide (ZnO) film"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/network/files/sM7jHreBJqBTJiuKp","dataSources":["pSNhXMFJxYm9uTCNt","PTLrA9fS3hyN8EQmt","ya2CyA73rpZseyrZ8","2252seNhipfTmjEBQ","t6wpuLQ6zczqJP6ot"],"keywords":["aluminium;chemical vapour deposition;micromechanical devices;piezoelectric thin films;silicon-on-insulator;zinc compounds;ansys;al metallization;mems acoustic sensor;pecvd sio2;soi wafer;si;si-diaphragm;sio2;zno;acoustic pressure;aluminum electrode;c-axis-oriented zno film;capacitor electrode;frequency 30 hz to 8000 hz;glass particle;microelectromechanical system;microtunnel blockage;piezoelectric thin film;piezoelectric zinc oxide;silicon particle;silicon-on-insulator wafer;size 0.2 micron;size 2.4 micron;size 25 micron;sound pressure level;stress distribution;acoustic sensors;cavity resonators;etching;fabrication;sensitivity;silicon;zinc oxide;diaphragm;silicon-on-insulator (soi) substrate;sound pressure level (spl);thin film;zinc oxide (zno) film"],"search_terms":["design","fabrication","diaphragm","zno","piezoelectric","film","based","mems","acoustic","sensor","using","soi","wafers","prasad","sahula","khanna"],"title":"Design and Fabrication of Si-Diaphragm, ZnO Piezoelectric Film-Based MEMS Acoustic Sensor Using SOI Wafers","year":2013}