Design and fabrication of Si-diaphragm, ZnO piezoelectric film-based MEMS acoustic sensor using SOI wafers. Prasad, M., Sahula, V., & Khanna, V., K. IEEE Transactions on Semiconductor Manufacturing, 26(2):233-241, 5, 2013.
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Paper Website doi abstract bibtex This paper reports a simpler technique for fabricating an acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 murm m, which is covered with 0.2-murm m-thick PECVD rm SiO2, is sandwiched between two aluminum electrodes on a 25- murm m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 murm V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.
@article{
title = {Design and fabrication of Si-diaphragm, ZnO piezoelectric film-based MEMS acoustic sensor using SOI wafers},
type = {article},
year = {2013},
keywords = {ANSYS,Acoustic sensors,Al metallization,Cavity resonators,Diaphragm,Etching,Fabrication,MEMS acoustic sensor,PECVD SiO2,SOI wafer,Sensitivity,Si,Si-diaphragm,SiO2,Silicon,Zinc oxide,ZnO,acoustic pressure,aluminium,aluminum electrode,c-axis-oriented ZnO film,capacitor electrode,chemical vapour deposition,frequency 30 Hz to 8000 Hz,glass particle,microelectromechanical system,micromechanical devices,microtunnel blockage,piezoelectric thin film,piezoelectric thin films,piezoelectric zinc oxide,silicon particle,silicon-on-insulator,silicon-on-insulator (SOI) substrate,silicon-on-insulator wafer,size 0.2 micron,size 2.4 micron,size 25 micron,sound pressure level,sound pressure level (SPL),stress distribution,thin film,zinc compounds,zinc oxide (ZnO) film},
pages = {233-241},
volume = {26},
websites = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6410046},
month = {5},
id = {f5557351-24b6-3534-80da-730baa1b6b12},
created = {2016-04-21T16:39:30.000Z},
accessed = {2015-12-15},
file_attached = {true},
profile_id = {03d2ca17-6bde-3cfe-95de-fcbe4f21507b},
last_modified = {2017-03-14T01:22:09.162Z},
read = {false},
starred = {false},
authored = {true},
confirmed = {true},
hidden = {false},
citation_key = {Prasad2013},
short_title = {Semiconductor Manufacturing, IEEE Transactions on},
private_publication = {false},
abstract = {This paper reports a simpler technique for fabricating an acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 murm m, which is covered with 0.2-murm m-thick PECVD rm SiO2, is sandwiched between two aluminum electrodes on a 25- murm m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 murm V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.},
bibtype = {article},
author = {Prasad, Mahanth and Sahula, Vineet and Khanna, Vinod Kumar},
doi = {10.1109/TSM.2013.2238956},
journal = {IEEE Transactions on Semiconductor Manufacturing},
number = {2}
}Downloads: 0
{"_id":"WGhBcW9xFTqjTqe8n","bibbaseid":"prasad-sahula-khanna-designandfabricationofsidiaphragmznopiezoelectricfilmbasedmemsacousticsensorusingsoiwafers-2013","author_short":["Prasad, M.","Sahula, V.","Khanna, V., K."],"bibdata":{"title":"Design and fabrication of Si-diaphragm, ZnO piezoelectric film-based MEMS acoustic sensor using SOI wafers","type":"article","year":"2013","keywords":"ANSYS,Acoustic sensors,Al metallization,Cavity resonators,Diaphragm,Etching,Fabrication,MEMS acoustic sensor,PECVD SiO2,SOI wafer,Sensitivity,Si,Si-diaphragm,SiO2,Silicon,Zinc oxide,ZnO,acoustic pressure,aluminium,aluminum electrode,c-axis-oriented ZnO film,capacitor electrode,chemical vapour deposition,frequency 30 Hz to 8000 Hz,glass particle,microelectromechanical system,micromechanical devices,microtunnel blockage,piezoelectric thin film,piezoelectric thin films,piezoelectric zinc oxide,silicon particle,silicon-on-insulator,silicon-on-insulator (SOI) substrate,silicon-on-insulator wafer,size 0.2 micron,size 2.4 micron,size 25 micron,sound pressure level,sound pressure level (SPL),stress distribution,thin film,zinc compounds,zinc oxide (ZnO) film","pages":"233-241","volume":"26","websites":"http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6410046","month":"5","id":"f5557351-24b6-3534-80da-730baa1b6b12","created":"2016-04-21T16:39:30.000Z","accessed":"2015-12-15","file_attached":"true","profile_id":"03d2ca17-6bde-3cfe-95de-fcbe4f21507b","last_modified":"2017-03-14T01:22:09.162Z","read":false,"starred":false,"authored":"true","confirmed":"true","hidden":false,"citation_key":"Prasad2013","short_title":"Semiconductor Manufacturing, IEEE Transactions on","private_publication":false,"abstract":"This paper reports a simpler technique for fabricating an acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 murm m, which is covered with 0.2-murm m-thick PECVD rm SiO2, is sandwiched between two aluminum electrodes on a 25- murm m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 murm V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.","bibtype":"article","author":"Prasad, Mahanth and Sahula, Vineet and Khanna, Vinod Kumar","doi":"10.1109/TSM.2013.2238956","journal":"IEEE Transactions on Semiconductor Manufacturing","number":"2","bibtex":"@article{\n title = {Design and fabrication of Si-diaphragm, ZnO piezoelectric film-based MEMS acoustic sensor using SOI wafers},\n type = {article},\n year = {2013},\n keywords = {ANSYS,Acoustic sensors,Al metallization,Cavity resonators,Diaphragm,Etching,Fabrication,MEMS acoustic sensor,PECVD SiO2,SOI wafer,Sensitivity,Si,Si-diaphragm,SiO2,Silicon,Zinc oxide,ZnO,acoustic pressure,aluminium,aluminum electrode,c-axis-oriented ZnO film,capacitor electrode,chemical vapour deposition,frequency 30 Hz to 8000 Hz,glass particle,microelectromechanical system,micromechanical devices,microtunnel blockage,piezoelectric thin film,piezoelectric thin films,piezoelectric zinc oxide,silicon particle,silicon-on-insulator,silicon-on-insulator (SOI) substrate,silicon-on-insulator wafer,size 0.2 micron,size 2.4 micron,size 25 micron,sound pressure level,sound pressure level (SPL),stress distribution,thin film,zinc compounds,zinc oxide (ZnO) film},\n pages = {233-241},\n volume = {26},\n websites = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6410046},\n month = {5},\n id = {f5557351-24b6-3534-80da-730baa1b6b12},\n created = {2016-04-21T16:39:30.000Z},\n accessed = {2015-12-15},\n file_attached = {true},\n profile_id = {03d2ca17-6bde-3cfe-95de-fcbe4f21507b},\n last_modified = {2017-03-14T01:22:09.162Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {true},\n hidden = {false},\n citation_key = {Prasad2013},\n short_title = {Semiconductor Manufacturing, IEEE Transactions on},\n private_publication = {false},\n abstract = {This paper reports a simpler technique for fabricating an acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on-insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 murm m, which is covered with 0.2-murm m-thick PECVD rm SiO2, is sandwiched between two aluminum electrodes on a 25- murm m-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 murm V/Pa (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.},\n bibtype = {article},\n author = {Prasad, Mahanth and Sahula, Vineet and Khanna, Vinod Kumar},\n doi = {10.1109/TSM.2013.2238956},\n journal = {IEEE Transactions on Semiconductor Manufacturing},\n number = {2}\n}","author_short":["Prasad, M.","Sahula, V.","Khanna, V., K."],"urls":{"Paper":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b/file/45de38a1-92b1-a8cb-055a-8f0dd8713f35/2013-Design_and_fabrication_of_Si-diaphragm_ZnO_piezoelectric_film-based_MEMS_acoustic_sensor_using_SOI_wafers.pdf.pdf","Website":"http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6410046"},"biburl":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b","bibbaseid":"prasad-sahula-khanna-designandfabricationofsidiaphragmznopiezoelectricfilmbasedmemsacousticsensorusingsoiwafers-2013","role":"author","keyword":["ANSYS","Acoustic sensors","Al metallization","Cavity resonators","Diaphragm","Etching","Fabrication","MEMS acoustic sensor","PECVD SiO2","SOI wafer","Sensitivity","Si","Si-diaphragm","SiO2","Silicon","Zinc oxide","ZnO","acoustic pressure","aluminium","aluminum electrode","c-axis-oriented ZnO film","capacitor electrode","chemical vapour deposition","frequency 30 Hz to 8000 Hz","glass particle","microelectromechanical system","micromechanical devices","microtunnel blockage","piezoelectric thin film","piezoelectric thin films","piezoelectric zinc oxide","silicon particle","silicon-on-insulator","silicon-on-insulator (SOI) substrate","silicon-on-insulator wafer","size 0.2 micron","size 2.4 micron","size 25 micron","sound pressure level","sound pressure level (SPL)","stress distribution","thin film","zinc compounds","zinc oxide (ZnO) film"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b","dataSources":["pSNhXMFJxYm9uTCNt","PTLrA9fS3hyN8EQmt","ya2CyA73rpZseyrZ8"],"keywords":["ansys","acoustic sensors","al metallization","cavity resonators","diaphragm","etching","fabrication","mems acoustic sensor","pecvd sio2","soi wafer","sensitivity","si","si-diaphragm","sio2","silicon","zinc oxide","zno","acoustic pressure","aluminium","aluminum electrode","c-axis-oriented zno film","capacitor electrode","chemical vapour deposition","frequency 30 hz to 8000 hz","glass particle","microelectromechanical system","micromechanical devices","microtunnel blockage","piezoelectric thin film","piezoelectric thin films","piezoelectric zinc oxide","silicon particle","silicon-on-insulator","silicon-on-insulator (soi) substrate","silicon-on-insulator wafer","size 0.2 micron","size 2.4 micron","size 25 micron","sound pressure level","sound pressure level (spl)","stress distribution","thin film","zinc compounds","zinc oxide (zno) film"],"search_terms":["design","fabrication","diaphragm","zno","piezoelectric","film","based","mems","acoustic","sensor","using","soi","wafers","prasad","sahula","khanna"],"title":"Design and fabrication of Si-diaphragm, ZnO piezoelectric film-based MEMS acoustic sensor using SOI wafers","year":2013}