@article{
 title = {Controlled Chemical Etching of ZnO Film for Step Coverage in MEMS Acoustic Sensor},
 type = {article},
 year = {2012},
 keywords = {Aluminum,Copper,Electrodes,Electrolytic copper addition,Etching,Fabrication,II-VI semiconductors,MEMS acoustic sensor,RF magnetron sputtering film deposition,Si,Sputtering,Zinc oxide,ZnO,acoustic transducers,controlled chemical etching,electrochemical electrodes,electrolytical added copper ion,film electrode formation,hanging structure,microsensors,negative profile,piezoelectric ZnO film,piezoelectric semiconductors,positive slope,resistivity 10 ohmcm to 20 ohmcm,semiconductor thin films,size 1.3 mum to 3.4 mum,sputter deposition,sputter etching,step coverage,step coverage problem,wafer suspension,wet etching technique,wetting,wide band gap semiconductors,zinc compounds},
 pages = {517-519},
 volume = {21},
 websites = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6175094},
 month = {6},
 id = {743b00f9-e399-35e3-ab10-f8d2354ad5fa},
 created = {2016-04-21T16:39:30.000Z},
 accessed = {2015-12-15},
 file_attached = {true},
 profile_id = {03d2ca17-6bde-3cfe-95de-fcbe4f21507b},
 last_modified = {2017-03-14T01:22:09.162Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {true},
 hidden = {false},
 citation_key = {6175094},
 source_type = {article},
 short_title = {Microelectromechanical Systems, Journal of},
 private_publication = {false},
 abstract = {In this letter, we report a novel wet etching technique of a c -axis-oriented ZnO film that solves the step coverage problem during formation of electrodes on this film. The negative profile or hanging structure of ZnO film deposited by RF magnetron sputtering was obtained during wet etching in HCl and NH4Cl solutions. The developed technique uses aqueous NH4Cl with electrolytically added copper ions. By suspending the wafer in the horizontal direction in a 20% NH4Cl solution, positive slope (more than 90 °) was obtained at the edge of the ZnO film. In this process, p-type 〈100〉 silicon wafers of 10-20-Ω·cm resistivity have been used. Al deposition was done to confirm the step coverage on ZnO film after getting the positive slope. The thickness of ZnO film was varied from 1.3 to 3.4 μm to observe the coverage of sidewall of ZnO film. The structure was also electrically tested and was found to function satisfactorily.},
 bibtype = {article},
 author = {Prasad, Mahanth and Yadav, R. P. and Sahula, V. and Khanna, V. K. and Shekhar, Chandra},
 doi = {10.1109/JMEMS.2012.2189362},
 journal = {IEEE Journal of Microelectromechanical Systems},
 number = {3}
}

{"_id":"Jgii774qpx2nuvzbT","bibbaseid":"prasad-yadav-sahula-khanna-shekhar-controlledchemicaletchingofznofilmforstepcoverageinmemsacousticsensor-2012","author_short":["Prasad, M.","Yadav, R., P.","Sahula, V.","Khanna, V., K.","Shekhar, C."],"bibdata":{"title":"Controlled Chemical Etching of ZnO Film for Step Coverage in MEMS Acoustic Sensor","type":"article","year":"2012","keywords":"Aluminum,Copper,Electrodes,Electrolytic copper addition,Etching,Fabrication,II-VI semiconductors,MEMS acoustic sensor,RF magnetron sputtering film deposition,Si,Sputtering,Zinc oxide,ZnO,acoustic transducers,controlled chemical etching,electrochemical electrodes,electrolytical added copper ion,film electrode formation,hanging structure,microsensors,negative profile,piezoelectric ZnO film,piezoelectric semiconductors,positive slope,resistivity 10 ohmcm to 20 ohmcm,semiconductor thin films,size 1.3 mum to 3.4 mum,sputter deposition,sputter etching,step coverage,step coverage problem,wafer suspension,wet etching technique,wetting,wide band gap semiconductors,zinc compounds","pages":"517-519","volume":"21","websites":"http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6175094","month":"6","id":"743b00f9-e399-35e3-ab10-f8d2354ad5fa","created":"2016-04-21T16:39:30.000Z","accessed":"2015-12-15","file_attached":"true","profile_id":"03d2ca17-6bde-3cfe-95de-fcbe4f21507b","last_modified":"2017-03-14T01:22:09.162Z","read":false,"starred":false,"authored":"true","confirmed":"true","hidden":false,"citation_key":"6175094","source_type":"article","short_title":"Microelectromechanical Systems, Journal of","private_publication":false,"abstract":"In this letter, we report a novel wet etching technique of a c -axis-oriented ZnO film that solves the step coverage problem during formation of electrodes on this film. The negative profile or hanging structure of ZnO film deposited by RF magnetron sputtering was obtained during wet etching in HCl and NH4Cl solutions. The developed technique uses aqueous NH4Cl with electrolytically added copper ions. By suspending the wafer in the horizontal direction in a 20% NH4Cl solution, positive slope (more than 90 °) was obtained at the edge of the ZnO film. In this process, p-type 〈100〉 silicon wafers of 10-20-Ω·cm resistivity have been used. Al deposition was done to confirm the step coverage on ZnO film after getting the positive slope. The thickness of ZnO film was varied from 1.3 to 3.4 μm to observe the coverage of sidewall of ZnO film. The structure was also electrically tested and was found to function satisfactorily.","bibtype":"article","author":"Prasad, Mahanth and Yadav, R. P. and Sahula, V. and Khanna, V. K. and Shekhar, Chandra","doi":"10.1109/JMEMS.2012.2189362","journal":"IEEE Journal of Microelectromechanical Systems","number":"3","bibtex":"@article{\n title = {Controlled Chemical Etching of ZnO Film for Step Coverage in MEMS Acoustic Sensor},\n type = {article},\n year = {2012},\n keywords = {Aluminum,Copper,Electrodes,Electrolytic copper addition,Etching,Fabrication,II-VI semiconductors,MEMS acoustic sensor,RF magnetron sputtering film deposition,Si,Sputtering,Zinc oxide,ZnO,acoustic transducers,controlled chemical etching,electrochemical electrodes,electrolytical added copper ion,film electrode formation,hanging structure,microsensors,negative profile,piezoelectric ZnO film,piezoelectric semiconductors,positive slope,resistivity 10 ohmcm to 20 ohmcm,semiconductor thin films,size 1.3 mum to 3.4 mum,sputter deposition,sputter etching,step coverage,step coverage problem,wafer suspension,wet etching technique,wetting,wide band gap semiconductors,zinc compounds},\n pages = {517-519},\n volume = {21},\n websites = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6175094},\n month = {6},\n id = {743b00f9-e399-35e3-ab10-f8d2354ad5fa},\n created = {2016-04-21T16:39:30.000Z},\n accessed = {2015-12-15},\n file_attached = {true},\n profile_id = {03d2ca17-6bde-3cfe-95de-fcbe4f21507b},\n last_modified = {2017-03-14T01:22:09.162Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {true},\n hidden = {false},\n citation_key = {6175094},\n source_type = {article},\n short_title = {Microelectromechanical Systems, Journal of},\n private_publication = {false},\n abstract = {In this letter, we report a novel wet etching technique of a c -axis-oriented ZnO film that solves the step coverage problem during formation of electrodes on this film. The negative profile or hanging structure of ZnO film deposited by RF magnetron sputtering was obtained during wet etching in HCl and NH4Cl solutions. The developed technique uses aqueous NH4Cl with electrolytically added copper ions. By suspending the wafer in the horizontal direction in a 20% NH4Cl solution, positive slope (more than 90 °) was obtained at the edge of the ZnO film. In this process, p-type 〈100〉 silicon wafers of 10-20-Ω·cm resistivity have been used. Al deposition was done to confirm the step coverage on ZnO film after getting the positive slope. The thickness of ZnO film was varied from 1.3 to 3.4 μm to observe the coverage of sidewall of ZnO film. The structure was also electrically tested and was found to function satisfactorily.},\n bibtype = {article},\n author = {Prasad, Mahanth and Yadav, R. P. and Sahula, V. and Khanna, V. K. and Shekhar, Chandra},\n doi = {10.1109/JMEMS.2012.2189362},\n journal = {IEEE Journal of Microelectromechanical Systems},\n number = {3}\n}","author_short":["Prasad, M.","Yadav, R., P.","Sahula, V.","Khanna, V., K.","Shekhar, C."],"urls":{"Paper":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b/file/5123f3bc-198c-8941-25af-f81b76293f8f/2012-Controlled_Chemical_Etching_of_ZnO_Film_for_Step_Coverage_in_MEMS_Acoustic_Sensor.pdf.pdf","Website":"http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6175094"},"biburl":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b","bibbaseid":"prasad-yadav-sahula-khanna-shekhar-controlledchemicaletchingofznofilmforstepcoverageinmemsacousticsensor-2012","role":"author","keyword":["Aluminum","Copper","Electrodes","Electrolytic copper addition","Etching","Fabrication","II-VI semiconductors","MEMS acoustic sensor","RF magnetron sputtering film deposition","Si","Sputtering","Zinc oxide","ZnO","acoustic transducers","controlled chemical etching","electrochemical electrodes","electrolytical added copper ion","film electrode formation","hanging structure","microsensors","negative profile","piezoelectric ZnO film","piezoelectric semiconductors","positive slope","resistivity 10 ohmcm to 20 ohmcm","semiconductor thin films","size 1.3 mum to 3.4 mum","sputter deposition","sputter etching","step coverage","step coverage problem","wafer suspension","wet etching technique","wetting","wide band gap semiconductors","zinc compounds"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b","dataSources":["pSNhXMFJxYm9uTCNt","PTLrA9fS3hyN8EQmt","ya2CyA73rpZseyrZ8"],"keywords":["aluminum","copper","electrodes","electrolytic copper addition","etching","fabrication","ii-vi semiconductors","mems acoustic sensor","rf magnetron sputtering film deposition","si","sputtering","zinc oxide","zno","acoustic transducers","controlled chemical etching","electrochemical electrodes","electrolytical added copper ion","film electrode formation","hanging structure","microsensors","negative profile","piezoelectric zno film","piezoelectric semiconductors","positive slope","resistivity 10 ohmcm to 20 ohmcm","semiconductor thin films","size 1.3 mum to 3.4 mum","sputter deposition","sputter etching","step coverage","step coverage problem","wafer suspension","wet etching technique","wetting","wide band gap semiconductors","zinc compounds"],"search_terms":["controlled","chemical","etching","zno","film","step","coverage","mems","acoustic","sensor","prasad","yadav","sahula","khanna","shekhar"],"title":"Controlled Chemical Etching of ZnO Film for Step Coverage in MEMS Acoustic Sensor","year":2012}