Preparation and structure of AlW thin films. Radić, N., Tonejc, A., Milun, M., Pervan, P., Ivkov, J., & Stubičar, M. Thin Solid Films, 317(1-2):96-99, 1998. Website abstract bibtex Thin films of AlW alloys were prepared by co-deposition of pure aluminum and pure tungsten, each sputtered by an independently controlled magnetron source. The deposition rate at the substrate (glass, fused quartz, and alumina ceramic), positioned 5 cm away from the target surface was 0.1–0.2 nm/s for pure metals, and the final film thickness was a few $μ$m. Completely amorphous films were obtained in the Al80W20–Al67W33 composition range. At higher tungsten content, the W(Al) solid solution and pure tungsten phases appeared. The amorphous alloys exhibit a high negative temperature coefficient of the electric resistivity, increasing with the aluminum content up to −5.5·10−4 K−1. Finally, the amorphous AlW alloys exhibit a remarkable microhardness (6–7 GPa), and are structurally stable up to at least 400°C.
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title = {Preparation and structure of AlW thin films},
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abstract = {Thin films of AlW alloys were prepared by co-deposition of pure aluminum and pure tungsten, each sputtered by an independently controlled magnetron source. The deposition rate at the substrate (glass, fused quartz, and alumina ceramic), positioned 5 cm away from the target surface was 0.1–0.2 nm/s for pure metals, and the final film thickness was a few $μ$m. Completely amorphous films were obtained in the Al80W20–Al67W33 composition range. At higher tungsten content, the W(Al) solid solution and pure tungsten phases appeared. The amorphous alloys exhibit a high negative temperature coefficient of the electric resistivity, increasing with the aluminum content up to −5.5·10−4 K−1. Finally, the amorphous AlW alloys exhibit a remarkable microhardness (6–7 GPa), and are structurally stable up to at least 400°C.},
bibtype = {article},
author = {Radić, Nikola and Tonejc, A and Milun, Milorad and Pervan, Petar and Ivkov, Jovica and Stubičar, Mirko},
journal = {Thin Solid Films},
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