An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts. Rajan, L., Periasamy, C., & Sahula, V. IEEE Sensors Journal, 19(9):1, 5, 2019.
An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts [link]Website  abstract   bibtex   
Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.
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 title = {An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts},
 type = {article},
 year = {2019},
 identifiers = {[object Object]},
 keywords = {Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film},
 pages = {1},
 volume = {19},
 websites = {https://ieeexplore.ieee.org/abstract/document/8616789},
 month = {5},
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 abstract = {Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.},
 bibtype = {article},
 author = {Rajan, L and Periasamy, C and Sahula, V},
 journal = {IEEE Sensors Journal},
 number = {9}
}

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