{"_id":"sxcgRLu9evwxr3aJS","bibbaseid":"rajan-periasamy-sahula-anindepthstudyonelectricalandhydrogensensingcharacteristicsofznothinfilmwithradiofrequencysputteredgoldschottkycontacts-2019","author_short":["Rajan, L.","Periasamy, C.","Sahula, V."],"bibdata":{"title":"An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts","type":"article","year":"2019","keywords":"Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film","pages":"1","volume":"19","websites":"https://ieeexplore.ieee.org/abstract/document/8616789","month":"5","id":"dbfac907-686c-3482-9b80-41f920138738","created":"2019-11-02T03:28:48.497Z","file_attached":false,"profile_id":"03d2ca17-6bde-3cfe-95de-fcbe4f21507b","last_modified":"2019-11-02T03:29:22.539Z","read":false,"starred":false,"authored":"true","confirmed":false,"hidden":false,"source_type":"Article","private_publication":false,"abstract":"Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.","bibtype":"article","author":"Rajan, L and Periasamy, C and Sahula, V","doi":"https://doi.org/10.1109/JSEN.2019.2893025","journal":"IEEE Sensors Journal","number":"9","bibtex":"@article{\n title = {An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts},\n type = {article},\n year = {2019},\n keywords = {Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film},\n pages = {1},\n volume = {19},\n websites = {https://ieeexplore.ieee.org/abstract/document/8616789},\n month = {5},\n id = {dbfac907-686c-3482-9b80-41f920138738},\n created = {2019-11-02T03:28:48.497Z},\n file_attached = {false},\n profile_id = {03d2ca17-6bde-3cfe-95de-fcbe4f21507b},\n last_modified = {2019-11-02T03:29:22.539Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {false},\n hidden = {false},\n source_type = {Article},\n private_publication = {false},\n abstract = {Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.},\n bibtype = {article},\n author = {Rajan, L and Periasamy, C and Sahula, V},\n doi = {https://doi.org/10.1109/JSEN.2019.2893025},\n journal = {IEEE Sensors Journal},\n number = {9}\n}","author_short":["Rajan, L.","Periasamy, C.","Sahula, V."],"urls":{"Website":"https://ieeexplore.ieee.org/abstract/document/8616789"},"biburl":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b","bibbaseid":"rajan-periasamy-sahula-anindepthstudyonelectricalandhydrogensensingcharacteristicsofznothinfilmwithradiofrequencysputteredgoldschottkycontacts-2019","role":"author","keyword":["Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/service/mendeley/03d2ca17-6bde-3cfe-95de-fcbe4f21507b","dataSources":["pSNhXMFJxYm9uTCNt","PTLrA9fS3hyN8EQmt","ya2CyA73rpZseyrZ8"],"keywords":["schottky diodes;zinc oxide;sensors;ii-vi semiconductor materials;hydrogen;temperature;gold;electrical characteristics;hydrogen sensing;metal-semiconductor interface palladium catalyst;schottky diode;zinc oxide (zno) thin film"],"search_terms":["depth","study","electrical","hydrogen","sensing","characteristics","zno","thin","film","radio","frequency","sputtered","gold","schottky","contacts","rajan","periasamy","sahula"],"title":"An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts","year":2019}