@Article{lintu2018jos,
  author   = {L. Rajan and C. Periasamy and V. Sahula},
  doi      = {10.1109/JSEN.2019.2893025},
  journal  = {IEEE Sensors Journal},
  number   = {9},
  title    = {An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of {ZnO} Thin Film with Radio Frequency Sputtered Gold Schottky Contacts},
  url      = {https://ieeexplore.ieee.org/document/8616789},
  volume   = {19},
  year     = {2019},
  issn     = {1530-437X},
  month    = may,
  pages    = {1-1},
  abstract = {Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.},
  keywords = {Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film},
}

{"_id":"sxcgRLu9evwxr3aJS","bibbaseid":"rajan-periasamy-sahula-anindepthstudyonelectricalandhydrogensensingcharacteristicsofznothinfilmwithradiofrequencysputteredgoldschottkycontacts-2019","author_short":["Rajan, L.","Periasamy, C.","Sahula, V."],"bibdata":{"bibtype":"article","type":"article","author":[{"firstnames":["L."],"propositions":[],"lastnames":["Rajan"],"suffixes":[]},{"firstnames":["C."],"propositions":[],"lastnames":["Periasamy"],"suffixes":[]},{"firstnames":["V."],"propositions":[],"lastnames":["Sahula"],"suffixes":[]}],"doi":"10.1109/JSEN.2019.2893025","journal":"IEEE Sensors Journal","number":"9","title":"An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts","url":"https://ieeexplore.ieee.org/document/8616789","volume":"19","year":"2019","issn":"1530-437X","month":"May","pages":"1-1","abstract":"Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.","keywords":"Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film","bibtex":"@Article{lintu2018jos,\r\n author = {L. Rajan and C. Periasamy and V. Sahula},\r\n doi = {10.1109/JSEN.2019.2893025},\r\n journal = {IEEE Sensors Journal},\r\n number = {9},\r\n title = {An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of {ZnO} Thin Film with Radio Frequency Sputtered Gold Schottky Contacts},\r\n url = {https://ieeexplore.ieee.org/document/8616789},\r\n volume = {19},\r\n year = {2019},\r\n issn = {1530-437X},\r\n month = may,\r\n pages = {1-1},\r\n abstract = {Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I –V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I – V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.},\r\n keywords = {Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film},\r\n}\r\n\r\n","author_short":["Rajan, L.","Periasamy, C.","Sahula, V."],"key":"lintu2018jos","id":"lintu2018jos","bibbaseid":"rajan-periasamy-sahula-anindepthstudyonelectricalandhydrogensensingcharacteristicsofznothinfilmwithradiofrequencysputteredgoldschottkycontacts-2019","role":"author","urls":{"Paper":"https://ieeexplore.ieee.org/document/8616789"},"keyword":["Schottky diodes;Zinc oxide;Sensors;II-VI semiconductor materials;Hydrogen;Temperature;Gold;Electrical characteristics;Hydrogen sensing;Metal-semiconductor interface Palladium catalyst;Schottky diode;Zinc oxide (ZnO) thin film"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/network/files/sM7jHreBJqBTJiuKp","dataSources":["pSNhXMFJxYm9uTCNt","PTLrA9fS3hyN8EQmt","ya2CyA73rpZseyrZ8","2252seNhipfTmjEBQ","t6wpuLQ6zczqJP6ot"],"keywords":["schottky diodes;zinc oxide;sensors;ii-vi semiconductor materials;hydrogen;temperature;gold;electrical characteristics;hydrogen sensing;metal-semiconductor interface palladium catalyst;schottky diode;zinc oxide (zno) thin film"],"search_terms":["depth","study","electrical","hydrogen","sensing","characteristics","zno","thin","film","radio","frequency","sputtered","gold","schottky","contacts","rajan","periasamy","sahula"],"title":"An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts","year":2019}