@article{
 title = {Electrical Characterization of Au/ZnO Thin Film Schottky diode on silicon substrate},
 type = {article},
 year = {2016},
 keywords = {Electrical characterization,Gold,Schottky diode,Thin film,Zinc oxide},
 pages = {66-68},
 volume = {8},
 websites = {http://linkinghub.elsevier.com/retrieve/pii/S2213020916300118,http://dx.doi.org/10.1016/j.pisc.2016.03.011},
 publisher = {Urban & Fischer},
 id = {1dc34057-59ea-342c-8e22-b0f9651fafd6},
 created = {2018-08-09T15:05:51.591Z},
 accessed = {2016-08-14},
 file_attached = {true},
 profile_id = {03d2ca17-6bde-3cfe-95de-fcbe4f21507b},
 last_modified = {2018-08-09T15:06:56.868Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {true},
 hidden = {false},
 citation_key = {Rajan2016a},
 source_type = {article},
 folder_uuids = {2e75317a-6021-4c24-9d76-92a4e1ad9cd4,eb474840-5125-4032-aab7-41ddd99e1ea7},
 private_publication = {false},
 abstract = {An array of Gold (Au) schottky contacts have been deposited on RF Sputtered nanocrystalline Zinc Oxide thin film. A systematic analysis on the electrical parameters of the Schottky diode with the help of current—voltage (I—V) and capacitance-voltage (C—V) measure-ments has been done, which confirmed its excellent rectifying characteristics. To incorporate the influence of series resistance in the determination of Schottky diode parameters (barrier height, ideality factor and saturation current), Cheung's method along with thermionic emis-sion model has also used. The discrepancy in the value of barrier height determined from C—V characteristics throws light into the presence of interface states.},
 bibtype = {article},
 author = {Rajan, Lintu and Periasamy, C. and Sahula, Vineet},
 doi = {10.1016/j.pisc.2016.03.011},
 journal = {Elsevier's Perspectives in Science, Science Direct}
}

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