{"_id":"PAjcRP8pBZuWXNXzG","bibbaseid":"rajan-periasamy-sahula-noblemetalschottkycontactsonnanocrystallinerfsputteredznothinfilm-2017","author_short":["Rajan, L.","Periasamy, C","Sahula, V."],"bibdata":{"bibtype":"inproceedings","type":"inproceedings","author":[{"firstnames":["Lintu"],"propositions":[],"lastnames":["Rajan"],"suffixes":[]},{"firstnames":["C"],"propositions":[],"lastnames":["Periasamy"],"suffixes":[]},{"firstnames":["Vineet"],"propositions":[],"lastnames":["Sahula"],"suffixes":[]}],"booktitle":"2017 Conference on Emerging Devices and Smart Systems (ICEDSS)","doi":"10.1109/ICEDSS.2017.8073660","title":"Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film","year":"2017","month":"March","pages":"63-67","abstract":"Schottky contacts on ZnO thin film have been synthesized using noble metals like Pt, Pd and Au on n-Si substrate using radio frequency sputtering technique. Electrical characterizations of all the three Schottky diodes have been conducted using semiconductor parameter analyzer. Important empiric parameters of the fabricated Schottky diodes such as barrier height, saturation current, ideality factor and series resistance have evaluated at room temperature and compared. Cheung's method has been used along with thermionic emission model to calculate series resistance of the devices. The results have confirmed that the Schottky contacts formed on ZnO thin film are suitable for potential electronic device applications. TCAD simulation using SILVACO ATLAS package has also been done and the Schottky diode parameters are obtained.","keywords":"gold;II-VI semiconductors;nanofabrication;nanostructured materials;palladium;platinum;Schottky barriers;Schottky diodes;semiconductor device models;semiconductor growth;semiconductor thin films;semiconductor-metal boundaries;sputter deposition;technology CAD (electronics);thermionic emission;wide band gap semiconductors;zinc compounds;n-Si substrate;electrical characterizations;semiconductor parameter analyzer;series resistance;noble metal schottky contacts;radiofrequency sputtering technique;empiric parameters;nanocrystalline RF sputtered thin film;barrier height;saturation current;ideality factor;Cheung method;thermionic emission model;electronic device;TCAD simulation;SILVACO ATLAS package;Schottky diode;temperature 293 K to 298 K;Pt-ZnO;Pd-ZnO;Au-ZnO;Si;Zinc oxide;II-VI semiconductor materials;Schottky diodes;Schottky barriers;Resistance;Radio frequency;Zinc oxide;Noble metals;Thin film;Schottky diode;Electrical characterisation","bibtex":"@InProceedings{lintu2017edss,\r\n author = {Lintu Rajan and C Periasamy and Vineet Sahula},\r\n booktitle = {2017 Conference on Emerging Devices and Smart Systems (ICEDSS)},\r\n doi = {10.1109/ICEDSS.2017.8073660},\r\n title = {Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film},\r\n year = {2017},\r\n month = {March},\r\n pages = {63-67},\r\n abstract = {Schottky contacts on ZnO thin film have been synthesized using noble metals like Pt, Pd and Au on n-Si substrate using radio frequency sputtering technique. Electrical characterizations of all the three Schottky diodes have been conducted using semiconductor parameter analyzer. Important empiric parameters of the fabricated Schottky diodes such as barrier height, saturation current, ideality factor and series resistance have evaluated at room temperature and compared. Cheung's method has been used along with thermionic emission model to calculate series resistance of the devices. The results have confirmed that the Schottky contacts formed on ZnO thin film are suitable for potential electronic device applications. TCAD simulation using SILVACO ATLAS package has also been done and the Schottky diode parameters are obtained.},\r\n keywords = {gold;II-VI semiconductors;nanofabrication;nanostructured materials;palladium;platinum;Schottky barriers;Schottky diodes;semiconductor device models;semiconductor growth;semiconductor thin films;semiconductor-metal boundaries;sputter deposition;technology CAD (electronics);thermionic emission;wide band gap semiconductors;zinc compounds;n-Si substrate;electrical characterizations;semiconductor parameter analyzer;series resistance;noble metal schottky contacts;radiofrequency sputtering technique;empiric parameters;nanocrystalline RF sputtered thin film;barrier height;saturation current;ideality factor;Cheung method;thermionic emission model;electronic device;TCAD simulation;SILVACO ATLAS package;Schottky diode;temperature 293 K to 298 K;Pt-ZnO;Pd-ZnO;Au-ZnO;Si;Zinc oxide;II-VI semiconductor materials;Schottky diodes;Schottky barriers;Resistance;Radio frequency;Zinc oxide;Noble metals;Thin film;Schottky diode;Electrical characterisation},\r\n}\r\n\r\n","author_short":["Rajan, L.","Periasamy, C","Sahula, V."],"key":"lintu2017edss","id":"lintu2017edss","bibbaseid":"rajan-periasamy-sahula-noblemetalschottkycontactsonnanocrystallinerfsputteredznothinfilm-2017","role":"author","urls":{},"keyword":["gold;II-VI semiconductors;nanofabrication;nanostructured materials;palladium;platinum;Schottky barriers;Schottky diodes;semiconductor device models;semiconductor growth;semiconductor thin films;semiconductor-metal boundaries;sputter deposition;technology CAD (electronics);thermionic emission;wide band gap semiconductors;zinc compounds;n-Si substrate;electrical characterizations;semiconductor parameter analyzer;series resistance;noble metal schottky contacts;radiofrequency sputtering technique;empiric parameters;nanocrystalline RF sputtered thin film;barrier height;saturation current;ideality factor;Cheung method;thermionic emission model;electronic device;TCAD simulation;SILVACO ATLAS package;Schottky diode;temperature 293 K to 298 K;Pt-ZnO;Pd-ZnO;Au-ZnO;Si;Zinc oxide;II-VI semiconductor materials;Schottky diodes;Schottky barriers;Resistance;Radio frequency;Zinc oxide;Noble metals;Thin film;Schottky diode;Electrical characterisation"],"metadata":{"authorlinks":{}}},"bibtype":"inproceedings","biburl":"https://bibbase.org/f/abBaRmaP2ww4GJLDb/VS-conference-IEEE.bib","dataSources":["foRZzjCMmTPmTF8eH"],"keywords":["gold;ii-vi semiconductors;nanofabrication;nanostructured materials;palladium;platinum;schottky barriers;schottky diodes;semiconductor device models;semiconductor growth;semiconductor thin films;semiconductor-metal boundaries;sputter deposition;technology cad (electronics);thermionic emission;wide band gap semiconductors;zinc compounds;n-si substrate;electrical characterizations;semiconductor parameter analyzer;series resistance;noble metal schottky contacts;radiofrequency sputtering technique;empiric parameters;nanocrystalline rf sputtered thin film;barrier height;saturation current;ideality factor;cheung method;thermionic emission model;electronic device;tcad simulation;silvaco atlas package;schottky diode;temperature 293 k to 298 k;pt-zno;pd-zno;au-zno;si;zinc oxide;ii-vi semiconductor materials;schottky diodes;schottky barriers;resistance;radio frequency;zinc oxide;noble metals;thin film;schottky diode;electrical characterisation"],"search_terms":["noble","metal","schottky","contacts","nanocrystalline","sputtered","zno","thin","film","rajan","periasamy","sahula"],"title":"Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film","year":2017}