Demonstration of CAM and TCAM Using Phase Change Devices

Demonstration of CAM and TCAM Using Phase Change Devices. Rajendran, B., Cheek, R. W., Lastras, L. A., Franceschini, M. M., Breitwisch, M. J., Schrott, A. G., Li, J., Montoye, R. K., Chang, L., & Lam, C. In 2011 3rd IEEE International Memory Workshop (<strong>IMW</strong>), pages 1–4, May, 2011.
doi bibtex

@INPROCEEDINGS{rajendran2011imw, 
author={B. Rajendran and R. W. Cheek and L. A. Lastras and M. M. Franceschini and M. J. Breitwisch and A. G. Schrott and Jing Li and R. K. Montoye and L. Chang and C. Lam}, 
booktitle={2011 3rd IEEE International Memory Workshop (<strong>IMW</strong>)}, 
title={Demonstration of {CAM} and {TCAM} Using Phase Change Devices}, 
year={2011}, 
volume={}, 
number={}, 
pages={1--4}, 
keywords={conference, Monte Carlo methods,content-addressable storage,phase change memories,Monte-Carlo simulation,PCM decives,SRAM,TCAM,content addressable memory,phase change devices,phase change memory technology,ternary CAM,Arrays,Computer aided manufacturing,FETs,Phase change materials,Programming,Resistance,Resistors}, 
doi={10.1109/IMW.2011.5873229}, 
ISSN={2159-483X}, 
month={May},}

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