@article{ ISI:A1997XB50100036,
Author = {Rao, RA and Gan, Q and Eom, CB and Cava, RJ and Suzuki, Y and Krajewski,
   JJ and Gausepohl, SC and Lee, M},
Title = {{Strain stabilized metal-insulator transition in epitaxial thin films of
   metallic oxide CaRuO3}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{1997}},
Volume = {{70}},
Number = {{22}},
Pages = {{3035-3037}},
Month = {{JUN 2}},
Abstract = {{We report the observation of both metallic and semiconducting behavior
   in epitaxial thin films of the metallic oxide CaRuO3 deposited under
   identical conditions. X-ray diffraction studies showed that while
   semiconducting films with enlarged unit cells were obtained on
   single-crystal (100) SrTiO3 substrates, metallic films with lattice
   parameters close to the bulk material grew on (100) LaAlO3 substrates
   and poor crystalline quality SrTiO3 substrates. It is believed that a
   strain induced substitution of the small Ru-4+ cations by the larger
   Ca2+ cations occurs, breaking the conduction pathway within the
   three-dimensional network of the RuO6 octahedra and leading to a
   metal-insulator transition. This unique phenomenon, which is not
   observed in bulk material, can be significant in technologically
   important epitaxial perovskite oxide heterostructures. (C) 1997 American
   Institute of Physics.}},
DOI = {{10.1063/1.118741}},
ISSN = {{0003-6951}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:A1997XB50100036}},
}

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