On modelling thermal oxidation of silicon II: numerical aspects. Rao, V. S, Hughes, T. J., & Garikipati, K. International Journal for Numerical Methods in Engineering, 47(1-3):359–377, 2000. Publisher: John Wiley & Sons, Ltd.
On modelling thermal oxidation of silicon II: numerical aspects [link]Paper  doi  bibtex   
@article{rao2000modelling,
	title = {On modelling thermal oxidation of silicon {II}: numerical aspects},
	volume = {47},
	url = {https://doi.org/10.1002/(sici)1097-0207(20000110/30)47:1/3<359::aid-nme775>3.3.co;2-z},
	doi = {10.1002/(sici)1097-0207(20000110/30)47:1/3<359::aid-nme775>3.3.co;2-z},
	number = {1-3},
	journal = {International Journal for Numerical Methods in Engineering},
	author = {Rao, Vinay S and Hughes, Thomas JR and Garikipati, Krishna},
	year = {2000},
	note = {Publisher: John Wiley \& Sons, Ltd.},
	pages = {359--377},
}

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