Effect of domain structure on the magnetoresistance of epitaxial thin films of ferromagnetic metallic oxide SrRuO3. Rao, R.; Kacedon, D.; and Eom, C. In Hundley, MF; Nickel, J.; Ramesh, R; and Tokura, Y, editors, SCIENCE AND TECHNOLOGY OF MAGNETIC OXIDES, volume 494, of MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pages 101-106, 1998. Mat Res Soc; Hewlett Packard Corp; Joint Res Ctr Atom Techn; Lake Shore Cryotron Inc; Los Alamos Natl Lab. Symposium on Metallic Magnetic Oxides at the Materials-Research-Society Fall Meeting, BOSTON, MA, DEC 01-04, 1997
abstract   bibtex   
We have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3 substrates. The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin films has been studied. Magnetization measurements on the single domain film on 2 degrees miscut (001) SrTiO3 substrate showed that the in-plane [<(1)over bar 10>] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropic magnetoresistance (AMR) effect of similar to 8% in magnitude. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects (similar to 10%) were observed when the current and the applied magnetic field are parallel. The magnetoresistance behavior is explained in terms of suppression of spin fluctuations near T-C and the AMR effect.
@inproceedings{ ISI:000073253400015,
Author = {Rao, RA and Kacedon, DB and Eom, CB},
Editor = {{Hundley, MF and Nickel, JH and Ramesh, R and Tokura, Y}},
Title = {{Effect of domain structure on the magnetoresistance of epitaxial thin
   films of ferromagnetic metallic oxide SrRuO3}},
Booktitle = {{SCIENCE AND TECHNOLOGY OF MAGNETIC OXIDES}},
Series = {{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}},
Year = {{1998}},
Volume = {{494}},
Pages = {{101-106}},
Note = {{Symposium on Metallic Magnetic Oxides at the Materials-Research-Society
   Fall Meeting, BOSTON, MA, DEC 01-04, 1997}},
Organization = {{Mat Res Soc; Hewlett Packard Corp; Joint Res Ctr Atom Techn; Lake Shore
   Cryotron Inc; Los Alamos Natl Lab}},
Abstract = {{We have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films
   with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3
   substrates. The effect of crystallographic domain structures on the
   magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin
   films has been studied. Magnetization measurements on the single domain
   film on 2 degrees miscut (001) SrTiO3 substrate showed that the in-plane
   {[}<(1)over bar 10>] direction, which is aligned along the miscut
   direction, is the easier axis for magnetization compared to the {[}001]
   direction. This film also showed a strong anisotropic magnetoresistance
   (AMR) effect of similar to 8\% in magnitude. In contrast, the SrRuO3
   thin film on (001) LaAlO3 substrate shows identical magnetization and
   magnetoresistance behavior in two orthogonal directions on the film due
   to the presence of 90 domains in the plane. For both the films, large
   negative magnetoresistance effects (similar to 10\%) were observed when
   the current and the applied magnetic field are parallel. The
   magnetoresistance behavior is explained in terms of suppression of spin
   fluctuations near T-C and the AMR effect.}},
ISSN = {{0272-9172}},
ISBN = {{1-55899-399-1}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:000073253400015}},
}
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