Effect of domain structure on the magnetoresistance of epitaxial thin films of ferromagnetic metallic oxide SrRuO3. Rao, R., Kacedon, D., & Eom, C. In Hundley, MF, Nickel, J., Ramesh, R, & Tokura, Y, editors, SCIENCE AND TECHNOLOGY OF MAGNETIC OXIDES, volume 494, of MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pages 101-106, 1998. Mat Res Soc; Hewlett Packard Corp; Joint Res Ctr Atom Techn; Lake Shore Cryotron Inc; Los Alamos Natl Lab. Symposium on Metallic Magnetic Oxides at the Materials-Research-Society Fall Meeting, BOSTON, MA, DEC 01-04, 1997abstract bibtex We have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3 substrates. The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin films has been studied. Magnetization measurements on the single domain film on 2 degrees miscut (001) SrTiO3 substrate showed that the in-plane [<(1)over bar 10>] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropic magnetoresistance (AMR) effect of similar to 8% in magnitude. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects (similar to 10%) were observed when the current and the applied magnetic field are parallel. The magnetoresistance behavior is explained in terms of suppression of spin fluctuations near T-C and the AMR effect.
@inproceedings{ ISI:000073253400015,
Author = {Rao, RA and Kacedon, DB and Eom, CB},
Editor = {{Hundley, MF and Nickel, JH and Ramesh, R and Tokura, Y}},
Title = {{Effect of domain structure on the magnetoresistance of epitaxial thin
films of ferromagnetic metallic oxide SrRuO3}},
Booktitle = {{SCIENCE AND TECHNOLOGY OF MAGNETIC OXIDES}},
Series = {{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}},
Year = {{1998}},
Volume = {{494}},
Pages = {{101-106}},
Note = {{Symposium on Metallic Magnetic Oxides at the Materials-Research-Society
Fall Meeting, BOSTON, MA, DEC 01-04, 1997}},
Organization = {{Mat Res Soc; Hewlett Packard Corp; Joint Res Ctr Atom Techn; Lake Shore
Cryotron Inc; Los Alamos Natl Lab}},
Abstract = {{We have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films
with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3
substrates. The effect of crystallographic domain structures on the
magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin
films has been studied. Magnetization measurements on the single domain
film on 2 degrees miscut (001) SrTiO3 substrate showed that the in-plane
{[}<(1)over bar 10>] direction, which is aligned along the miscut
direction, is the easier axis for magnetization compared to the {[}001]
direction. This film also showed a strong anisotropic magnetoresistance
(AMR) effect of similar to 8\% in magnitude. In contrast, the SrRuO3
thin film on (001) LaAlO3 substrate shows identical magnetization and
magnetoresistance behavior in two orthogonal directions on the film due
to the presence of 90 domains in the plane. For both the films, large
negative magnetoresistance effects (similar to 10\%) were observed when
the current and the applied magnetic field are parallel. The
magnetoresistance behavior is explained in terms of suppression of spin
fluctuations near T-C and the AMR effect.}},
ISSN = {{0272-9172}},
ISBN = {{1-55899-399-1}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:000073253400015}},
}
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The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin films has been studied. Magnetization measurements on the single domain film on 2 degrees miscut (001) SrTiO3 substrate showed that the in-plane [<(1)over bar 10>] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropic magnetoresistance (AMR) effect of similar to 8% in magnitude. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects (similar to 10%) were observed when the current and the applied magnetic field are parallel. 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The effect of crystallographic domain structures on the\n magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin\n films has been studied. Magnetization measurements on the single domain\n film on 2 degrees miscut (001) SrTiO3 substrate showed that the in-plane\n {[}<(1)over bar 10>] direction, which is aligned along the miscut\n direction, is the easier axis for magnetization compared to the {[}001]\n direction. This film also showed a strong anisotropic magnetoresistance\n (AMR) effect of similar to 8\\% in magnitude. In contrast, the SrRuO3\n thin film on (001) LaAlO3 substrate shows identical magnetization and\n magnetoresistance behavior in two orthogonal directions on the film due\n to the presence of 90 domains in the plane. For both the films, large\n negative magnetoresistance effects (similar to 10\\%) were observed when\n the current and the applied magnetic field are parallel. 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