Materials engineering for Phase Change Random Access Memory

Materials engineering for Phase Change Random Access Memory. Raoux, S., Cheng, H., Sandrini, J., Li, J., & Jordan-Sweet, J. In 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding (NVMTS), pages 1–5, Nov, 2011.
doi bibtex

@INPROCEEDINGS{raoux2011nvmts, 
author={Simone Raoux and Huai-Yu Cheng and Jury Sandrini and Jing Li and Jean Jordan-Sweet}, 
booktitle={2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding (NVMTS)}, 
title={Materials engineering for Phase Change Random Access Memory}, 
year={2011}, 
volume={}, 
number={}, 
pages={1--5}, 
keywords={conference, X-ray diffraction,antimony alloys,crystallisation,germanium alloys,phase change materials,phase change memories,tellurium alloys,GeSbTe,amorphous phase,crystallization temperature,electrical contrast,materials ewngineering,phase change random access memory,rhombohedral phase,temperature 200 degC,time resolved X-ray diffraction,Phase Change Materials,Phase Change Random Access Memory}, 
doi={10.1109/NVMTS.2011.6137090}, 
ISSN={}, 
month={Nov},}

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