On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies. Reboh, S., Schaurich, F., Declemy, A., Barbot, J.&nbsp;F., Beaufort, M.&nbsp;F., Cherkashin, N., & Fichtner, P.&nbsp;F.<nbsp>P. Journal of Applied Physics, 108(2):023502, July, 2010.
doi  abstract   bibtex   
We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing (350 degrees C) is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature (700 degrees C), determining the optimal conditions for thick layer transfer. 1.5 mu m thick Si films are then obtained onto glass substrates. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459884]
@article{ reboh_microstructure_2010,
  title = {On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies},
  volume = {108},
  issn = {0021-8979},
  doi = {10.1063/1.3459884},
  abstract = {We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing (350 degrees C) is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature (700 degrees C), determining the optimal conditions for thick layer transfer. 1.5 mu m thick Si films are then obtained onto glass substrates. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459884]},
  language = {English},
  number = {2},
  journal = {Journal of Applied Physics},
  author = {Reboh, S. and Schaurich, F. and Declemy, A. and Barbot, J. F. and Beaufort, M. F. and Cherkashin, N. and Fichtner, P. F. P.},
  month = {July},
  year = {2010},
  keywords = {bubbles, cut, damage accumulation, exfoliation, growth-kinetics, hydrogen, implanted silicon, mechanism},
  pages = {023502}
}

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