Epitaxial growth of YNi2B2C films on single crystal MgO substrates: an HRTEM investigation of the interface. Reibold, M., Wimbush, S. C., Holzapfel, B., & Krämer, U. J. Alloys. Compd., 347(1-2):24–30, December, 2002. doi abstract bibtex Epitaxial thin films of the superconducting borocarbide compound YNi2B2C have been grown on single-crystal MgO (001) substrates using pulsed laser deposition. The deposition temperature has a strong influence on the structural properties of the films, which in turn affect the superconducting transition temperature, Tc. The resulting phases and their orientations with respect to the substrate have been investigated by X-ray diffraction and HRTEM, using cross-section samples. For deposition temperatures around 750 8C, c-axis oriented growth of YNi2B2C films occurs preferentially. At lower temperatures a weaker a-axis orientation was found by X-ray diffraction, whereas by HRTEM grains with a-axis and a weak c-axis orientation could be identified. An interfacial layer some 100 nm thick was formed bordering on the substrate, comprising mainly Y2O3 but also other epitaxially grown phases such as YNi4B. The growth directions of Y2O3 are [001] at 750 8C and [111] at lower temperatures. The in-plane orientations and the lattice mismatches of the bordering phases were also investigated.
@article{reibold_epitaxial_2002,
title = {Epitaxial growth of {YNi2B2C} films on single crystal {MgO} substrates: an {HRTEM} investigation of the interface},
volume = {347},
issn = {0925-8388},
doi = {10.1016/S0925-8388(02)00753-3},
abstract = {Epitaxial thin films of the superconducting borocarbide compound YNi2B2C have been grown on single-crystal MgO (001) substrates using pulsed laser deposition. The deposition temperature has a strong influence on the structural properties of the films, which in turn affect the superconducting transition temperature, Tc. The resulting phases and their orientations with respect to the substrate have been investigated by X-ray diffraction and HRTEM, using cross-section samples. For deposition temperatures around 750 8C, c-axis oriented growth of YNi2B2C films occurs preferentially. At lower temperatures a weaker a-axis orientation was found by X-ray diffraction, whereas by HRTEM grains with a-axis and a weak c-axis orientation could be identified. An interfacial layer some 100 nm thick was formed bordering on the substrate, comprising mainly Y2O3 but also other epitaxially grown phases such as YNi4B. The growth directions of Y2O3 are [001] at 750 8C and [111] at lower temperatures. The in-plane orientations and the lattice mismatches of the bordering phases were also investigated.},
language = {en},
number = {1-2},
journal = {J. Alloys. Compd.},
author = {Reibold, M. and Wimbush, S. C. and Holzapfel, B. and Krämer, U.},
month = dec,
year = {2002},
pages = {24--30},
file = {Reibold et al. - 2002 - Epitaxial growth of YNi2B2C films on single crysta.pdf:C\:\\Users\\scwim\\OneDrive\\Work\\Zotero Library\\Reibold et al. - 2002 - Epitaxial growth of YNi2B2C films on single crysta.pdf:application/pdf},
}
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The resulting phases and their orientations with respect to the substrate have been investigated by X-ray diffraction and HRTEM, using cross-section samples. For deposition temperatures around 750 8C, c-axis oriented growth of YNi2B2C films occurs preferentially. At lower temperatures a weaker a-axis orientation was found by X-ray diffraction, whereas by HRTEM grains with a-axis and a weak c-axis orientation could be identified. An interfacial layer some 100 nm thick was formed bordering on the substrate, comprising mainly Y2O3 but also other epitaxially grown phases such as YNi4B. The growth directions of Y2O3 are [001] at 750 8C and [111] at lower temperatures. The in-plane orientations and the lattice mismatches of the bordering phases were also investigated.","language":"en","number":"1-2","journal":"J. Alloys. 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