@article{Reklaitis2017,
  author = {I. Reklaitis and F. Nippert and R. Kud{\v{z}}ma and T. Malinauskas and S. Yu. Karpov and I. Pietzonka and H.-J. Lugauer and M. Stra{\ss}burg and P. Vitta and R. Toma{\v{s}}i{\={u}}nas and A. Hoffmann},
  journal = {Journal of Applied Physics},
  volume = {121},
  pages = {035701},
  doi = {10.1063/1.4973903},
  year = {2017},
  title = {Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements: Advantages and limitations of the technique},
  abstract = {Recently, a novel method for evaluation of recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination channels has been proposed, which combines measurements of the light emitting diode (LED) external quantum efficiency under continuous wave operation with the determination of non-equilibrium carrier differential life time (DLT) by small-signal time-resolved photoluminescence (SSTRPL). In this work, we suggest an alternative technique, small-signal frequency-domain lifetime measurements (SSFDLM), which is implemented more easily and capable of operating in a wider range of LED operating currents. The DLTs measured by both techniques are shown to agree well with each other, but saturate at low currents, contrary to the trend predicted by the well-known ABC-model. We discuss possible reasons for this deviation, as well as advantages and limitations of the measurement techniques.}
}

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Y.","Pietzonka, I.","Lugauer, H.","Straßburg, M.","Vitta, P.","Tomašiūnas, R.","Hoffmann, A."],"year":2017,"bibtype":"article","biburl":"http://physik.tu-berlin.de/~felix/Pubs.bib","bibdata":{"bibtype":"article","type":"article","author":[{"firstnames":["I."],"propositions":[],"lastnames":["Reklaitis"],"suffixes":[]},{"firstnames":["F."],"propositions":[],"lastnames":["Nippert"],"suffixes":[]},{"firstnames":["R."],"propositions":[],"lastnames":["Kudžma"],"suffixes":[]},{"firstnames":["T."],"propositions":[],"lastnames":["Malinauskas"],"suffixes":[]},{"firstnames":["S.","Yu."],"propositions":[],"lastnames":["Karpov"],"suffixes":[]},{"firstnames":["I."],"propositions":[],"lastnames":["Pietzonka"],"suffixes":[]},{"firstnames":["H.-J."],"propositions":[],"lastnames":["Lugauer"],"suffixes":[]},{"firstnames":["M."],"propositions":[],"lastnames":["Straßburg"],"suffixes":[]},{"firstnames":["P."],"propositions":[],"lastnames":["Vitta"],"suffixes":[]},{"firstnames":["R."],"propositions":[],"lastnames":["Tomašiūnas"],"suffixes":[]},{"firstnames":["A."],"propositions":[],"lastnames":["Hoffmann"],"suffixes":[]}],"journal":"Journal of Applied Physics","volume":"121","pages":"035701","doi":"10.1063/1.4973903","year":"2017","title":"Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements: Advantages and limitations of the technique","abstract":"Recently, a novel method for evaluation of recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination channels has been proposed, which combines measurements of the light emitting diode (LED) external quantum efficiency under continuous wave operation with the determination of non-equilibrium carrier differential life time (DLT) by small-signal time-resolved photoluminescence (SSTRPL). In this work, we suggest an alternative technique, small-signal frequency-domain lifetime measurements (SSFDLM), which is implemented more easily and capable of operating in a wider range of LED operating currents. The DLTs measured by both techniques are shown to agree well with each other, but saturate at low currents, contrary to the trend predicted by the well-known ABC-model. We discuss possible reasons for this deviation, as well as advantages and limitations of the measurement techniques.","bibtex":"@article{Reklaitis2017,\n author = {I. Reklaitis and F. Nippert and R. Kud{\\v{z}}ma and T. Malinauskas and S. Yu. Karpov and I. Pietzonka and H.-J. Lugauer and M. Stra{\\ss}burg and P. Vitta and R. Toma{\\v{s}}i{\\={u}}nas and A. Hoffmann},\n journal = {Journal of Applied Physics},\n volume = {121},\n pages = {035701},\n doi = {10.1063/1.4973903},\n year = {2017},\n title = {Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements: Advantages and limitations of the technique},\n abstract = {Recently, a novel method for evaluation of recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination channels has been proposed, which combines measurements of the light emitting diode (LED) external quantum efficiency under continuous wave operation with the determination of non-equilibrium carrier differential life time (DLT) by small-signal time-resolved photoluminescence (SSTRPL). In this work, we suggest an alternative technique, small-signal frequency-domain lifetime measurements (SSFDLM), which is implemented more easily and capable of operating in a wider range of LED operating currents. The DLTs measured by both techniques are shown to agree well with each other, but saturate at low currents, contrary to the trend predicted by the well-known ABC-model. We discuss possible reasons for this deviation, as well as advantages and limitations of the measurement techniques.}\n}\n\n","author_short":["Reklaitis, I.","Nippert, F.","Kudžma, R.","Malinauskas, T.","Karpov, S. Y.","Pietzonka, I.","Lugauer, H.","Straßburg, M.","Vitta, P.","Tomašiūnas, R.","Hoffmann, A."],"key":"Reklaitis2017","id":"Reklaitis2017","bibbaseid":"reklaitis-nippert-kudma-malinauskas-karpov-pietzonka-lugauer-straburg-etal-differentialcarrierlifetimeininganbasedlightemittingdiodesobtainedbysmallsignalfrequencydomainmeasurementsadvantagesandlimitationsofthetechnique-2017","role":"author","urls":{},"metadata":{"authorlinks":{}},"downloads":0,"html":""},"search_terms":["differential","carrier","lifetime","ingan","based","light","emitting","diodes","obtained","small","signal","frequency","domain","measurements","advantages","limitations","technique","reklaitis","nippert","kudžma","malinauskas","karpov","pietzonka","lugauer","straßburg","vitta","tomašiūnas","hoffmann"],"keywords":[],"authorIDs":[],"dataSources":["oGWnvzC2nMYBFQSx5"]}