@article{ ISI:000180307300161,
Author = {Reu, PL and Chen, CF and Engelstad, RL and Lovell, EG and Bayer, T and
   Greschner, J and Kalt, S and Weiss, H and Wood, OR and Mackay, RS},
Title = {{Electron projection lithography mask format layer stress measurement and
   simulation of pattern transfer distortion}},
Journal = {{JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B}},
Year = {{2002}},
Volume = {{20}},
Number = {{6}},
Pages = {{3053-3057}},
Month = {{NOV-DEC}},
Note = {{46th International Conference on Electron, Ion, and Photon Beam
   Technology and Nanofabrication (EIPBN), ANAHEIM, CALIFORNIA, MAY 28-31,
   2002}},
Abstract = {{Electron projection lithography (EPL) is one of the leading candidates
   for the sub-65 nm lithography node. The development of a low-distortion
   mask is critical to the success of EPL. This article proposes and
   analyzes two new EPL mask formats described as a ``corrugated-continuous
   membrane mask{''} and a ``carbon-continuous membrane mask.{''} Novel
   process flows for the manufacture of these masks have been developed at
   Team Nanotec GmbH. Resonant frequency stress measurements of the.
   ultrathin membrane bilayers were completed and subsequently used in the
   finite element simulation of the mask fabrication and pattern transfer.
   The new mask types have the benefits of the lower distortions of a
   typical continuous membrane mask, but maintain the advantage of the
   higher throughput stencil format because of the ultrathin films. In
   addition, the proposed masks remove the need for pattern splitting
   typically used with complementary systems. (C) 2002 American Vacuum
   Society.}},
DOI = {{10.1116/1.1521732}},
ISSN = {{1071-1023}},
ResearcherID-Numbers = {{WeiSS, Helmut/E-6587-2013
   }},
ORCID-Numbers = {{Chen, Cheng-fu/0000-0001-7183-1918}},
Unique-ID = {{ISI:000180307300161}},
}

{"_id":"kgkdKz8c6kAbybL2Z","bibbaseid":"reu-chen-engelstad-lovell-bayer-greschner-kalt-weiss-etal-electronprojectionlithographymaskformatlayerstressmeasurementandsimulationofpatterntransferdistortion-2002","authorIDs":[],"author_short":["Reu, P.","Chen, C.","Engelstad, R.","Lovell, E.","Bayer, T","Greschner, J","Kalt, S","Weiss, H","Wood, O.","Mackay, R."],"bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Reu"],"firstnames":["PL"],"suffixes":[]},{"propositions":[],"lastnames":["Chen"],"firstnames":["CF"],"suffixes":[]},{"propositions":[],"lastnames":["Engelstad"],"firstnames":["RL"],"suffixes":[]},{"propositions":[],"lastnames":["Lovell"],"firstnames":["EG"],"suffixes":[]},{"propositions":[],"lastnames":["Bayer"],"firstnames":["T"],"suffixes":[]},{"propositions":[],"lastnames":["Greschner"],"firstnames":["J"],"suffixes":[]},{"propositions":[],"lastnames":["Kalt"],"firstnames":["S"],"suffixes":[]},{"propositions":[],"lastnames":["Weiss"],"firstnames":["H"],"suffixes":[]},{"propositions":[],"lastnames":["Wood"],"firstnames":["OR"],"suffixes":[]},{"propositions":[],"lastnames":["Mackay"],"firstnames":["RS"],"suffixes":[]}],"title":"Electron projection lithography mask format layer stress measurement and simulation of pattern transfer distortion","journal":"JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B","year":"2002","volume":"20","number":"6","pages":"3053-3057","month":"NOV-DEC","note":"46th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), ANAHEIM, CALIFORNIA, MAY 28-31, 2002","abstract":"Electron projection lithography (EPL) is one of the leading candidates for the sub-65 nm lithography node. The development of a low-distortion mask is critical to the success of EPL. This article proposes and analyzes two new EPL mask formats described as a ``corrugated-continuous membrane mask'' and a ``carbon-continuous membrane mask.'' Novel process flows for the manufacture of these masks have been developed at Team Nanotec GmbH. Resonant frequency stress measurements of the. ultrathin membrane bilayers were completed and subsequently used in the finite element simulation of the mask fabrication and pattern transfer. The new mask types have the benefits of the lower distortions of a typical continuous membrane mask, but maintain the advantage of the higher throughput stencil format because of the ultrathin films. In addition, the proposed masks remove the need for pattern splitting typically used with complementary systems. (C) 2002 American Vacuum Society.","doi":"10.1116/1.1521732","issn":"1071-1023","researcherid-numbers":"WeiSS, Helmut/E-6587-2013 ","orcid-numbers":"Chen, Cheng-fu/0000-0001-7183-1918","unique-id":"ISI:000180307300161","bibtex":"@article{ ISI:000180307300161,\nAuthor = {Reu, PL and Chen, CF and Engelstad, RL and Lovell, EG and Bayer, T and\n Greschner, J and Kalt, S and Weiss, H and Wood, OR and Mackay, RS},\nTitle = {{Electron projection lithography mask format layer stress measurement and\n simulation of pattern transfer distortion}},\nJournal = {{JOURNAL OF VACUUM SCIENCE \\& TECHNOLOGY B}},\nYear = {{2002}},\nVolume = {{20}},\nNumber = {{6}},\nPages = {{3053-3057}},\nMonth = {{NOV-DEC}},\nNote = {{46th International Conference on Electron, Ion, and Photon Beam\n Technology and Nanofabrication (EIPBN), ANAHEIM, CALIFORNIA, MAY 28-31,\n 2002}},\nAbstract = {{Electron projection lithography (EPL) is one of the leading candidates\n for the sub-65 nm lithography node. The development of a low-distortion\n mask is critical to the success of EPL. This article proposes and\n analyzes two new EPL mask formats described as a ``corrugated-continuous\n membrane mask{''} and a ``carbon-continuous membrane mask.{''} Novel\n process flows for the manufacture of these masks have been developed at\n Team Nanotec GmbH. Resonant frequency stress measurements of the.\n ultrathin membrane bilayers were completed and subsequently used in the\n finite element simulation of the mask fabrication and pattern transfer.\n The new mask types have the benefits of the lower distortions of a\n typical continuous membrane mask, but maintain the advantage of the\n higher throughput stencil format because of the ultrathin films. In\n addition, the proposed masks remove the need for pattern splitting\n typically used with complementary systems. (C) 2002 American Vacuum\n Society.}},\nDOI = {{10.1116/1.1521732}},\nISSN = {{1071-1023}},\nResearcherID-Numbers = {{WeiSS, Helmut/E-6587-2013\n }},\nORCID-Numbers = {{Chen, Cheng-fu/0000-0001-7183-1918}},\nUnique-ID = {{ISI:000180307300161}},\n}\n\n","author_short":["Reu, P.","Chen, C.","Engelstad, R.","Lovell, E.","Bayer, T","Greschner, J","Kalt, S","Weiss, H","Wood, O.","Mackay, R."],"key":"ISI:000180307300161","id":"ISI:000180307300161","bibbaseid":"reu-chen-engelstad-lovell-bayer-greschner-kalt-weiss-etal-electronprojectionlithographymaskformatlayerstressmeasurementandsimulationofpatterntransferdistortion-2002","role":"author","urls":{},"downloads":0},"bibtype":"article","biburl":"http://nanotec.cnr.it/data/nanotec/nanotec-full.bib","creationDate":"2020-04-22T21:25:44.595Z","downloads":0,"keywords":[],"search_terms":["electron","projection","lithography","mask","format","layer","stress","measurement","simulation","pattern","transfer","distortion","reu","chen","engelstad","lovell","bayer","greschner","kalt","weiss","wood","mackay"],"title":"Electron projection lithography mask format layer stress measurement and simulation of pattern transfer distortion","year":2002,"dataSources":["ZTEbWc6bW5f9DTsjF"]}